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| NTD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features * * * * Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com ID MAX (Note 1) 17 A V(BR)DSS 100 V RDS(on) MAX 81 mW @ 10 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Continuous Drain Current Power Dissipation Pulsed Drain Current Steady State Steady State TC = 25C TC = 100C TC = 25C PD IDM TJ, Tstg IS EAS Symbol VDSS VGS ID Value 100 $20 17 11 71 62 -55 to +175 17 43 W Unit V V A N-Channel D G A C A mJ 12 4 1 3 S 4 tp = 10 ms Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 17 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds TL 260 C THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) Steady State Junction-to-Ambient (Note 1) Symbol RqJC RqJA Max 2.1 40 Unit C/W DPAK CASE 369AA STYLE 2 3 IPAK CASE 369D STYLE 2 2 YWW 64 16ANG 1 Gate 2 Drain 3 Source YWW 64 16ANG 1 Gate 2 Drain 3 Source Publication Order Number: NTD6416AN/D Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in [2 oz] including traces). MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain 4 Drain 6416AN Y WW G = Device Code = Year = Work Week = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. (c) Semiconductor Components Industries, LLC, 2009 November, 2009 - Rev. 0 1 NTD6416AN ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Plateau Voltage Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge td(on) tr td(off) tf VSD trr ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 17 A TJ = 25C TJ = 125C VGS = 10 V, VDD = 80 V, ID = 17 A, RG = 6.1 W 9.2 22 24 20 0.85 0.7 56 41 15 135 nC ns 1.2 V ns VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGP RG VGS = 10 V, VDS = 80 V, ID = 17 A VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 10 V, ID = 17 A VDS = 5 V, ID = 10 A VGS = VDS, ID = 250 mA 2.0 7.7 73 12 620 110 50 20 1.0 3.6 10 5.8 2.4 V W nC 81 4.0 V mV/C mW S pF V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 100 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 100 112 1.0 100 "100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = "20 V CHARGES, CAPACITANCES AND GATE RESISTANCE DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 17 A 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD6416AN TYPICAL CHARACTERISTICS 40 TJ = 25C ID, DRAIN CURRENT (A) 30 40 35 ID, DRAIN CURRENT (A) 30 25 20 15 10 5 10 0 TJ = -55C 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 125C TJ = 25C 10 V 7.5 V 6.5 V 6.0 V VDS w 10 V 20 5.5 V 10 5.0 V 4.5 V 2 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0 0 Figure 1. On-Region Characteristics 0.11 0.10 0.09 0.08 0.07 0.06 ID = 17 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.25 Figure 2. Transfer Characteristics VGS = 10 V 0.20 0.15 0.10 TJ = 25C 0.05 TJ = -55C 0.00 8 10 12 14 16 18 20 TJ = 175C TJ = 125C 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Region versus Gate Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 10000 3 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.5 2 ID = 17 A VGS = 10 V VGS = 0 V IDSS, LEAKAGE (nA) 1000 TJ = 150C 1.5 1 100 TJ = 125C 0.5 -50 -25 0 25 50 75 100 125 150 175 10 10 20 30 40 50 60 70 80 90 100 Figure 5. On-Resistance Variation with Temperature TJ, JUNCTION TEMPERATURE (C) Figure 6. Drain-to-Source Leakage Current versus Voltage VDS, DRAIN-TO-SOURCE VOLTAGE (V) http://onsemi.com 3 NTD6416AN TYPICAL CHARACTERISTICS 10 8 6 4 2 0 ID = 17 A TJ = 25C 0 5 10 15 Qg, TOTAL GATE CHARGE (nC) Qgs VGS, GATE-TO-SOURCE VOLTAGE (V) 1000 C, CAPACITANCE (pF) 800 600 400 200 0 Crss 0 Coss Ciss TJ = 25C VGS = 0 V QT VDS Qgd VGS 100 80 60 40 20 0 20 20 40 60 80 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 100 Figure 7. Capacitance Variation 1000 Figure 8. Gate-to-Source Voltage and Drain-to-Source Voltage versus Total Charge 20 IS, SOURCE CURRENT (A) TJ = 25C VGS = 0 V 15 VDS = 80 V ID = 17 A VGS = 10 V td(off) tr t, TIME (ns) 100 10 10 tf td(on) 5 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 1.0 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 1000 AVALANCHE ENERGY (mJ) 50 ID = 17 A 40 30 20 10 0 25 ID, DRAIN CURRENT (A) 100 10 ms 10 VGS = 10 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 100 ms 1 ms 10 ms dc 1 0.1 Figure 11. Maximum Rated Forward Biased Safe Operating Area 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1000 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE 175 http://onsemi.com 4 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1200 NTD6416AN TYPICAL CHARACTERISTICS 10 1 R(t) (C/W) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) 0.1 1 10 Figure 13. Thermal Response ORDERING INFORMATION Device NTD6416ANT4G NTD6416AN-1G Package DPAK (Pb-Free) IPAK (Pb-Free) Shipping 2500 / Tape & Reel 75 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 5 NTD6416AN PACKAGE DIMENSIONS DPAK CASE 369AA-01 ISSUE A -T- B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.025 0.035 0.018 0.024 0.030 0.045 0.386 0.410 0.018 0.023 0.090 BSC 0.180 0.215 0.024 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.63 0.89 0.46 0.61 0.77 1.14 9.80 10.40 0.46 0.58 2.29 BSC 4.57 5.45 0.60 1.01 0.51 --- 0.89 1.27 3.93 --- S A 1 2 3 Z H U F L D 2 PL J DIM A B C D E F H J L R S U V Z 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NTD6416AN PACKAGE DIMENSIONS DPAK CASE 369D-01 ISSUE B B V R 4 C E Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- S -T- SEATING PLANE A 1 2 3 K F D G 3 PL J H M 0.13 (0.005) T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NTD6416AN/D |
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