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BSD314SPE
OptiMOSTM-P 3 Small-Signal-Transistor
Features * P-channel * Enhancement mode * Logic level (4.5V rated) * ESD protected * Qualified according AEC Q101 * 100% Lead-free; RoHS compliant
Product Summary V DS R DS(on),max V GS=-10 V V GS=-4.5 V ID 30 140 230 -1.5 PG-SOT-363
6 5 4
V m
A
1
2
3
Type BSD314SPE
Package PG-SOT-363
Tape and Reel Information L6327: 3000 pcs/ reel
Marking XDs
Lead Free Yes
Packing Non dry
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 C T A=70 C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 C I D=-1.5A, R GS=25 I D=-1.5 A, V DS=-16V, di /dt =-200A/s, T j,max=150 C Value -1.5 -1.2 -6.1 6 mJ Unit A
Reverse diode dv /dt
dv /dt
6
kV/s
Gate source voltage Power dissipation1) Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1
V GS P tot T j, T stg JESD22-A114 -HBM T A=25 C
20 0.5 -55 ... 150 2 (2kV to 4kV) 260 C 55/150/56
V W C
C C
Rev 2.1
page 1
2010-03-29
BSD314SPE
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA
1)
Values typ. max.
Unit
minimal footprint
-
-
250
K/W
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics V (BR)DSS V GS= 0V, I D=-250A V GS(th) I DSS V DS=VGS, I D=-6.3A V DS=-30V, V GS=0 V, T j=25 C V DS=-30V, V GS=0V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20V, V DS=0V V GS=-4.5V, I D=-1.2A V GS=-10V, I D=-1.5A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.2 A
Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current
-30 -1 -
-1.5 -
-2 -1
V
A
-
153 107 3
-100 -5 230 140 S A m
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on both sides of the PCB.
1)
Rev 2.1
page 2
2010-03-29
BSD314SPE
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 C V GS=0 V, I F=-1.5A, T j=25 C V R=-15 V, I F=-1.5A, di F/dt =100 A/s 0.8 12.5 4.3 -0.5 -6.1 1.1 V ns nC A Q gs Q gd Qg V plateau V DD=-15 V, I D=-1.5 A, V GS=0 to -10 V -0.7 -0.3 -2.9 -3.2 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=-15V, V GS=-10 V, I D=-1.5 A, R G=6 V GS=0 V, V DS=-15 V, f =1 MHz 221 126 7 5.1 3.9 12.4 2.8 294 168 11 ns pF Values typ. max. Unit
Rev 2.1
page 3
2010-03-29
BSD314SPE
1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS-10 V
1.6 0.5
1.2 0.375
P tot [W]
I D [A]
0 40 80 120
0.8
0.25
0.125
0.4
0
0 0 20 40 60 80 100 120 140 160
T A [C]
T A [C]
3 Safe operating area I D=f(V DS); T A=25 C; D =0 parameter: t p
101
100 s 10 s 1 s
4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T
103
100
1 ms 10 ms
0.5
10
2
0.2 0.1
Z thJA [K/W]
10-1
DC
0.05
I D [A]
10
1
0.02 0.01
10-2
single pulse
10 10-3
0
10-4 10
-2
10-1 10
-1
10
0
10
1
10
2
10-5
10-4
10-3
10-2
10-1
100
101
102
V DS [V]
t p [s]
Rev 2.1
page 4
2010-03-29
BSD314SPE
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
8
5V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
400
3V
7
10 V 4.5 V
350 300
4V
3.3 V 3.5 V
6
4V
R DS(on) [m]
5
250 200 150 100 50 0
I D [A]
4
4.5 V 5V
3
3.5 V
2
10 V
3.3 V
1
3V 2.8 V
0 0 1 2 3 4 5
0
1
2
3
4
5
6
7
8
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max
8 Typ. forward transconductance g fs=f(I D); T j=25 C
6
8
5 6 4
3
g fs [S]
150 C 25 C
I D [A]
4
2
2 1
0 0 1 2 3 4 5
0 0 1 2 3 4 5 6 7 8
V GS [V]
I D [A]
Rev 2.1
page 5
2010-03-29
BSD314SPE
9 Drain-source on-state resistance R DS(on)=f(T j); I D=-1.5 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=-6.3 A parameter: I D
250 2.5
200
2
98 %
R DS(on) [m]
150
98 %
typ
100
V GS(th) [V]
1.5
typ
1
2%
50
0.5
0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
103
101
25 C Ciss Coss 150 C, 98% 150 C
10
0
102
C [pF]
I F [A]
10-1
25 C, 98%
Crss
101 10-2
100 0 5 10 15 20
10-3 0 0.4 0.8 1.2 1.6
V DS [V]
V SD [V]
Rev 2.1
page 6
2010-03-29
BSD314SPE
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
101
14 Typ. gate charge V GS=f(Q gate); I D=-1.5 A pulsed parameter: V DD
12
10
8
25 C
V GS [V]
I AV [A]
100
6
10 V
100 C
4
125 C
4V
16 V
2
10-1 100 101 102 103
0 0 1 2 3
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 A
16 Gate charge waveforms
33
V GS
32
Qg
31
V BR(DSS) [V]
30
V g s(th)
29
28
Q g(th) Q gs
-60 -20 20 60 100 140
Q sw Q gd
Q g ate
27
T j [C]
Rev 2.1
page 7
2010-03-29
BSD314SPE
SOT-363 Package Outline:
Footprint:
Packing:
Reflow soldering:
Rev 2.1
page 8
2010-03-29
BSD314SPE
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev 2.1
page 9
2010-03-29

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