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| STD2NC45-1 N-channel 450 V, 4.1 1.5 A, IPAK , SuperMESHTM Power MOSFET Features Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark 2 1 3 Application Switching applications IPAK Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products. Figure 1. Internal schematic diagram Table 1. Device summary Order code STD2NC45-1 Marking D2NC45 Package IPAK Packaging Tube April 2009 Doc ID 9103 Rev 4 1/13 www.st.com 13 Contents STD2NC45-1 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuits ............................................... 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 Doc ID 9103 Rev 4 STD2NC45-1 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 450 30 1.5 0.95 6 30 0.24 3 -65 to 150 Max. operating junction temperature C Unit V V A A A W W/C V/ns C PTOT dv/dt (2) Tstg Tj Peak diode recovery voltage slope Storage temperature 1. Pulse width limited by safe operating area 2. ISD < 0.5A, di/dt < 100 A/s, VDD =80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 4.1 100 275 Unit C/W C/W C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, ID=IAS, VDD=50V) Value 1.5 25 Unit A mJ Doc ID 9103 Rev 4 3/13 Electrical characteristics STD2NC45-1 2 Electrical characteristics (TCASE = 25C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125C VGS = 30V VDS = VGS, ID = 250A VGS = 10V, ID = 0.5A 2.3 3 4.1 Min. 450 1 50 100 3.7 4.5 Typ. Max. Unit V A A nA V Table 6. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS > ID(on) x RDS(on)max, ID = 0.5A Min. Typ. 1.1 160 27.5 4.7 7 1.3 3.2 Max. Unit S pF pF pF nC nC nC VDS = 25V, f = 1 MHz, VGS = 0 - VDD = 360V, ID = 1.5A, VGS = 10V, RG = 4.7 (see Figure 17) - 10 1. Pulsed: pulse duration = 300 s, duty cycle 1.5 % Table 7. Symbol td(on) tr tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 225V, ID = 0.5A RG = 4.7 VGS = 10V (see Figure 16) VDD = 360V, ID = 1.5A, RG = 4.7, VGS = 10V (see Figure 16) Min. Typ. 6.7 4 8.5 12 18 Max. Unit ns ns ns ns ns - - - - 4/13 Doc ID 9103 Rev 4 STD2NC45-1 Electrical characteristics Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 1.5A, VGS = 0 ISD = 1.5A, di/dt = 100A/s VDD = 100V, Tj = 150C (see Figure 21) Test conditions Min. 225 530 4.7 Typ. Max. Unit 1.5 6.0 1.6 A A V ns C A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 s, duty cycle 1.5 % Doc ID 9103 Rev 4 5/13 Electrical characteristics STD2NC45-1 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for IPAK Figure 3. Thermal impedance for IPAK Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/13 Doc ID 9103 Rev 4 STD2NC45-1 Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized BVDSS vs temperature Doc ID 9103 Rev 4 7/13 Electrical characteristics Figure 14. Max Id current vs Temperature STD2NC45-1 Figure 15. Maximum avalanche energy vs temperature 8/13 Doc ID 9103 Rev 4 STD2NC45-1 Test circuits 3 Test circuits Figure 17. Gate charge test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform Doc ID 9103 Rev 4 9/13 Package mechanical data STD2NC45-1 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/13 Doc ID 9103 Rev 4 STD2NC45-1 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. A A1 b b2 b4 c c2 D E e e1 H L (L1) L2 V1 9.00 0.80 0.80 10 o 4.40 16.10 9.40 1.20 5.20 0.45 0.48 6.00 6.40 2.28 4.60 min. 2.20 0.90 0.64 typ max. 2.40 1.10 0.90 0.95 5.40 0.60 0.60 6.20 6.60 0068771_H Doc ID 9103 Rev 4 11/13 Revision history STD2NC45-1 5 Revision history Table 9. Date 21-Jun-2004 12-Jul-2006 17-Apr-2009 Revision history Revision 2 3 4 Complete version New template Updated mechanical data New ECOPACK(R) statement in Section 4: Package mechanical data Changes 12/13 Doc ID 9103 Rev 4 STD2NC45-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 9103 Rev 4 13/13 |
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