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SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBQR0130R-HF (RoHS Device)
Io = 100 mA VR = 30 Volts
0402(1005)
0.041(1.05) 0.037(0.95)
Features
Halogen free. Low reverse current. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction.
0.026(0.65) 0.022(0.55)
Mechanical data
Case: 0402(1005) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BQ Mounting position: Any. Weight: 0.001 gram(approx.).
0.020(0.50) Typ. 0.012(0.30) Typ.
0.022(0.55) 0.018(0.45)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Storage temperature Junction temperature
Conditions
Symbol Min Typ Max Unit
VRRM VR IO 35 30 100 1 125 -40 +125 +125 V V mA A mW
O
8.3ms single half sine-wave superimposed on rate load(JEDEC method)
IFSM PD TSTG Tj
C C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
O
Parameter
Forward voltage Reverse current IF = 10 mA VR = 10 V
Conditions
Symbol Min Typ Max Unit
VF IR 0.45 0.5 V uA
REV:C
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Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBQR0130R-HF)
Fig. 1 - Forward characteristics
1000 1m
125 C
O
Fig. 2 - Reverse characteristics
Forward current (mA )
100
Reverse current ( A )
100u
10u
75 C
O
10
C
O
1u
25 C
O
5
12
C
100n
-25 C
O
O
75
25
O
C
1
C
O
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-25
10n 1n 0 5 10
15
20
25
30
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between terminals characteristics
Capacitance between terminals (PF)
100
Fig.4 - Current derating curve
Average forward current(%)
f = 1 MHz Ta = 25 C
100
80
10
60
40
20
1 0 5 10 15 20 25 30
0 0 25 50 75 100
O
125
150
Reverse voltage (V)
Ambient temperature ( C)
Fig. 5 - VF Dispersion map
590
O
Fig. 6 - IR Dispersion map
1000 900
O
Fig. 7 - CT Dispersion map
50
O
Ta=25 C IF=200mA n=30pcs
Ta=25 C VR=10V n=30pcs
45
Capacitance between terminals(pF)
Forward voltage (mV)
Reverse current (nA)
580
800 700 600 500 400 300 200 100
AVG:111nA
40 35 30 25 20 15 10 5 0
AVG:18.8pF
Ta=25 C F=1MHz VR=0V n=10pcs
570
560
AVG:568mV
550
540
0
REV:C
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Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
P0 P1 d Index hole E T
F B
Polarity
W C
P
A
12 0
o
D2
D1 D
W1
Trailer ....... .......
10 pitches (min)
Device ....... ....... ....... .......
Leader ....... .......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
0.75 0.10
0.026 0.004
B
1.15 0.10
0.045 0.004
C
0.60 0.10
0.024 0.004
d
1.55 0.10
0.061 0.004
D
178 1
7.008 0.04
D1
60.0 MIN.
2.362 MIN.
D2
13.0 0.20
0.512 0.008
QR/0402
(mm) (inch)
SYMBOL
E
1.75 0.10
0.069 0.004
F
3.50 0.05
0.138 0.002
P
4.00 0.10
0.157 0.004
P0
4.00 0.10
0.157 0.004
P1
2.00 0.10
0.079 0.004
T
0.22 0.05
0.009 0.002
W
8.00 0.20
0.315 0.008
W1
13.5 MAX.
0.531 MAX.
QR/0402
(mm) (inch)
REV:C
QW-G1099
Page 3
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Part Number CDBQR0130R-HF Marking Code
BQ
BQ
Suggested PAD Layout
QR/0402 SIZE (mm) A B C D E 0.750 0.500 0.700 1.250 0.250 (inch) 0.030 0.020
C D A E
0.028 0.049 0.010
B
Standard Package
Qty per Reel Case Type (Pcs) QR/0402 5000 Reel Size (inch) 7
REV:C
QW-G1099
Page 4
Comchip Technology CO., LTD.

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