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| D882 TRANSISTOR ( NPN ) TO-126 1. EMITTER 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction Temperature Junction and Storage Temperature Parameter Value 40 30 6 3 1.25 150 -55-150 Units V V V A W *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT VCE=2V, IC= 100mA IC=2A, IC=2A, IB= 0.2A IB= 0.2A IC=0.1mA 50 32 0.5 1.5 V V MHz Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) unless Test otherwise specified) MIN 40 30 6 1 10 1 60 400 TYP MAX UNIT V V V uA uA uA conditions Ic=100uA ,IE=0 IC= 10 mA , IB=0 IE= 100 mA ,IC=0 VCB=40 V , IE=0 VCE=30 V , IB=0 VEB=6V , IC=0 VCE= 2V, IC= 1A VCE=5 V, f = 10MHz CLASSIFICATION OF hFE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 Web Site: WWW.PS-PFS.COM D882 Rank Range TRANSISTOR ( NPN ) R 60-120 O 100-200 Y 160-320 GR 200-400 Web Site: WWW.PS-PFS.COM |
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