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| E L E C T R O N I C RSM5853P P-Channel 20Volt (D-S) MOSFET With Schottky Diode Application -These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on) and to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as coputers, printers, PCMCIA cards, cellular and cordless telephones. A A S G 1 2 3 4 S CF 1206-8 TOP VIEW 8 7 6 5 K K K D D Feature -Low RDS(on) provides higger efficiency and extends battery life -Low thermal impedance copper leadframe CF 1206-8 saves board space -Fast switching speed -High performance trench technology G Absolute Maximum Ratings PARAMETER Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current @ TJ = 150C (MOSFET) (Note 1) Pulsed Drain Current (MOSFET) (Note 2) Continuous Source Current (MOSFET Diode Conduction) (Note 1) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) (Note 1) TA = 25 C TA = 70 C TA = 25 C TA = 70 C TJ , TSTG t 5sec Steady State RJA PD TA = 25 C TA = 70 C SYMBOL VDS VKA VGS ID IDM IS IF IFM D A MAXIMUM -20 20 8 2.5 1.9 10 -1.6 0.5 8 2.1 1.1 1.3 0.68 -55 to +150 60 110 UNIT V A W Maximum Power Dissipation (Schottky) (Note 1) Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Note: 1.Surface Mounted on 1" X 1" FR-4 Board 2.Pulse width limited by maximum junction temperature C C/W September 2008 / Rev.6.2 http:// www.sirectsemi.com RSM5853P MOSFET Specifications PARAMETER STATIC Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (Note 1) Drain-Source On-State Resistance (Note 1) Forward Tranconductance (Note 1) Diode Forward Voltage DYNAMIC (Note 2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Times Fall Time Qg Qgs Qgd Td(on) tr Td(off) tf VDD = -5V, RL = 5, VGEN = -4.5V, RG = 6 VDS = -5V, VGS = -4.5V, ID = -3.6A 6.0 0.8 1.3 6.5 20 31 21 nS nC VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VDS = VGS, ID = -250A VDS = 0V, VGS = 8V VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 55C VDS = -5V, VGS = -4.5V VGS = -4.5V, ID = -3.6A VGS = -2.5V, ID = -3.0A VDS = -5V, ID = -3.6A IS = -1.6A, VGS = 0V 3 -0.70 -5 0.110 0.160 -0.4 100 -1 -10 V nA A A S V SYMBOL CONDITIONS MIN. TYP. MAX. UNIT Schottky Specifications PARAMETER Forward Voltage Drop SYMBOL VF CONDITIONS IF = 0.5A IF = 0.5A, TJ = 125C Vr = 30V Maximum Reverse Leakage Current Irm Vr = 30V, TJ = 75C Vr = 30V, TJ = 125C Junction Capacitance CT Vr = 10V 31 MIN. TYP. MAX. 0.48 0.4 0.1 1 10 pF mA UNIT V Note: 1. Pulse Test : PW300s duty cycle2% 2.Guaranteed by design, not subject to production tesing http:// www.sirectsemi.com RSM5853P 2 15 VGS = -4.5V -3.0V -ID, DRAIN CURRENT (A) -3.5V 12 -ID, DRAIN CURRENT (A) -2.5V 1.8 1.6 1.4 1.2 1 0.8 VGS = -2.0V 9 -2.0V -2.5V -3.0V -3.5V -4.5V 6 3 -1.5V 0 0 1 2 3 4 0 3 6 9 12 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.4 0.22 RDS(on), NORMALIZED DRAINSOURCE ON-RESISTANCE 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 ID = -2A VGS = -4.5V RDS(on), ON-RESISTANCE (O) ID = -1A 0.18 0.14 TA = 125C 0.10 TA = 25C 0.06 0.02 1 2 3 4 5 TJ, JUNCTION TEMPERATURE (C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate to Source Voltage 10 VGS = 0V VDS = -5V TA = -55C -ID, DRAIN CURRENT (A) 25C 125C -IS, REVERSE DRAIN CURRENT (A) 10 1 8 TA = 125C .1 6 25C .01 4 .001 -55C 2 0 0.5 1 1.5 2 2.5 .0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature http:// www.sirectsemi.com RSM5853P 5 ID = -3.5V VDS = -5V -10V -VGS, GATE-SOURCE VOLTAGE (V) 1000 CISS f = 1MHz VGS = 0V -15V CAPACITANCE (pF) 4 800 3 600 2 400 COSS CROSS 1 200 0 0 2 4 6 8 10 0 0 5 10 15 20 Qd, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 100 RDS(ON) LIMIT 5 100s -ID, DRAIN CURRENT (A) 10 10 10 1m ms s 4 SINGLE PLUSE RJA = 156 oC/W TA = 25 oC POWER (W) 1 DC 0m 1s s 3 2 0.1 VGS = -4.5V SINGLE PLUSE RJA = 156oC/W TA = 25oC 1 0 0.1 1 10 100 1 10 100 0.01 0.1 SINGLE PULSE TIME (SEC) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area Figure 10. Single Pluse Maximum Power Dissipation 1 D = 0.5 THERMAL IMPEDANCE ZthJC (C/W) D = 0.2 RJA(t) = r(t) + RJA RJA = 156oC/W 0.1 D = 0.1 D = 0.05 D = 0.02 PDM t1 0.01 D = 0.01 t2 SINGLE PULSE (THERMAL RESISTANCE) Notes: 1.Duty factor D = t1 / t2 2.Peak Tj = PDM x ZthJC + TC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (SEC) Figure 11. Transient Thermal Response Curve http:// www.sirectsemi.com RSM5853P E E1 b e D L1 L c A A1 DIM A A1 b c D E E1 e L L1 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.027 0.036 0.70 0.90 0.000 0.002 0.00 0.03 0.009 0.014 0.24 0.35 0.003 0.010 0.08 0.25 0.118 BSC 3.00 BSC 0.079 BSC 2.00 BSC 0.067 BSC 1.70 BSC 0.026 BSC 0.65 BSC 0.008 0.016 0.20 0.40 0.000 0.004 0.00 0.10 0 12 0 12 NOTE Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: sgc@sirectsemi.com France: ss@sirectsemi.com Taiwan: se@sirectsemi.com Hong Kong: hk@sirectsemi.com China: st@sirectsemi.com ...Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com http:// www.sirectsemi.com |
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