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 SS6612
High-Efficiency Synchronous Step-up DC/DC Converter with Selectable Current Limit
FEATURES
High efficiency (93% with VIN=2.4V, VOUT= 3.3V, IOUT=200mA) Output current up to 500mA. (VIN=2.4V, at VOUT=3.3V, CLSEL=OUT) Quiescent supply current of 20A Power-saving shutdown mode (0.1A typical). Internal synchronous rectifier (no external diode required). Selectable current limit for reduced ripple. Low-noise, anti-ringing feature. On-chip low-battery detector. Low-battery hysteresis. Space-saving package: MSOP-10
DESCRIPTION
The SS6612 is a high-efficiency step-up DC/DC converter, with a start-up voltage as low as 0.8V, and an operating voltage down to 0.7V. Consuming only 20A of quiescent current, this device includes a built-in synchronous rectifier that reduces size and cost by eliminating the need for an external Schottky diode, and improves overall efficiency by minimizing losses. The switching frequency can range up to 500KHz depending on the load and input voltage. The output voltage can be easily set; by two external resistors for 1.8V to 5.5V; con-
APPLICATIONS
Palmtop & Notebook Computers. PDAs Wireless Phones Pocket Organizers. Digital Cameras. Hand-Held Devices with 1 to 3 Cells of NiMH/NiCd Batteries.
necting FB to OUT to get 3.3V; or connecting to GND to get 5.0V. For additional design flexibility, the peak current of the internal switch is selectable (0.65A or 1.0A). The SS6612 also features a circuit that eliminates noise caused by inductor ringing.
TYPICAL APPLICATION CIRCUIT
VIN + 47F OFF SHDN CLSEL SS6612 LBI REF 0.1F GND LBO FB 200 BATT ON LX OUT Output 3.3V, 5.0V or Adj. (1.8V to + 5.5V) up to 300mA 47F Low-battery Detect Out 22H
Selectable Current Limit (1.0A or 0.65A) Low Battery Detection
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SS6612
ORDERING INFORMATION
SS6612CXXX
PIN CONFIGURATION
MSOP-10
FB 1
Packing TR: Tape and reel Package type O: MSOP-10
TOP VIEW
10 OUT
LBI 2 LBO 3 CLSEL 4 REF 5
9 LX 8 GND 7 BATT
6 SHDN
Example: SS6612COTR in MSOP-10 package supplied on tape and reel.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage (OUT to GND)
Switch Voltage (LX to GND)
Battery Voltage (BATT to GND)
SHDN , LBO to GND
8.0V
VOUT+ 0.3V
6.0V
6.0V
VOUT+0.3V
-1.5A to +1.5A
-1.5A to +1.5A
-40C ~ +85C
-65C ~150C
LBI, REF, FB, CLSEL to GND
Switch Current (LX)
Output Current (OUT)
Operating Temperature Range
Storage Temperature Range
TEST CIRCUIT
Refer to the typical application circuit.
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SS6612
ELECTRICAL CHARACTERISTICS
(VIN = 2.0V, VOUT = 3.3V (FB = VOUT), RL = , TA = 25C, unless otherwise specified.)
PARAMETER
Minimum Input Voltage Operating Voltage Start-Up Voltage Start-Up Voltage Temp. Coeff. Output Voltage Range Output Voltage
TEST CONDITIONS
MIN.
TYP.
0.7
MAX.
UNIT
V
1.1 RL=3k (Note1) 0.8 -2 VIN5.5 1.1
V V mV/C
5.5 3.43 V
Steady State Output Current (Note 2)
(VOUT
=3.3V) CLSEL=GND CLSEL=OUT
mA FB=GND
(VOUT
230 160 1.23 0.024 1.261 V mV/C 30 10 1.261 0.6 1.25 A 0.85 1 35 1 A A A % 85 mV mV/V V
=5.0V) CLSEL=GND
Reference Voltage Reference Voltage Temp. Coeff. Reference Load Regulation Reference Line Regulation FB, LBI Input Threshold
IREF= 0
IREF = 0 to 100A VOUT = 1.8V to 5.5V 1.199
10 5 1.23 0.3 0.80 0.50 1.0 0.65 0.05 20 0.1 90
Internal switch On-Resistance ILX = 100mA CLSEL=OUT LX Switch Current Limit CLSEL=GND LX Leakage Current Operating Current into OUT (Note 3) Shutdown Current into OUT Efficiency VFB = 1.4V , VOUT = 3.3V VLX=0V~4V; VOUT=4V
SHDN = GND
VOUT= 3.3V ,ILOAD = 200mA VOUT = 2V ,ILOAD = 1mA
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ELECTRICAL CHARACTERISTICS
PARAMETER
LX Switch On-Time LX Switch Off-Time FB Input Current LBI Input Current CLSEL Input Current (Continued)
TEST CONDITIONS
VFB =1V , VOUT = 3.3V VFB =1V , VOUT = 3.3V VFB = 1.4V VLBI = 1.4V CLSEL = OUT
MIN.
2 0.6
TYP.
4 0.9 0.03 1 1.4
MAX.
7 1.4 50 50 3
UNIT
s s nA nA A
SHDN Input Current LBO Low Output Voltage LBO Off Leakage Current LBI Hystereisis Damping Switch Resistance SHDN Input Voltage
V SHDN = 0 or VOUT VLBI = 0, ISINK = 1mA V LBO = 5.5V, VLBI = 5.5V
0.07 0.2 0.07 50
50 0.4 1
nA
A
mV 100 0.2VOUT V
VBATT = 2V VIL VIH VIL 0.8VOUT
50
0.2VOUT V 0.8VOUT
CLSEL Input Voltage VIH
Note 1: Start-up voltage operation is guaranteed without the addition of an external Schottky diode between the input and output. Note 2: Steady-state output current indicates that the device maintains output voltage regulation under load. Note 3: Device is bootstrapped (power to the IC comes from OUT). This correlates directly with the actual battery supply.
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TYPICAL PERFORMANCE CHARACTERISTICS
160 140 0.4 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.5
Input Battery Current (A)
Shutdown Current (A)
VOUT=5V (FB=GND)
0.3
0.2
0.1
VOUT=3.3V (FB=OUT)
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Fig. 1
1.8 1.6
Input battery voltage (V) No-Load Battery Current vs. Input Battery
CCM/DCM Boundary Output Current (mA)
Supply Voltage (V)
Fig. 2
400 350 300 250 200 150 100 50
0 0.5
Shutdown Current vs. Supply Voltage
Start-Up Voltage (V)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01
VOUT=5V (FB=GND)
L=22H CIN=100F COUT=100F
VOUT=3.3V (FB=OUT)
VOUT=3.3V (FB=OUT)
VOUT=5.0V (FB=GND)
0.1
1
10
100
Output Current (mA)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Input Voltage (V)
Fig. 3
100 90 80
Start-Up Voltage vs. Output Current
220 200 180
Fig. 4
Turning Point between CCM & DCM
CLSEL=OUT (ILIMIT =1A)
Ripple Voltage (mV)
Efficiency (%)
70 60 50 40 30 20 10 0 0.01 0.1
VIN=1.2V VIN=2.4V VIN=3.6V VOUT=5V (FB=GND) CLSEL=OUT (ILIMIT =1A)
1 10 100 1000
160 140 120 100 80 60 40 20 0 0 50 100 150 200 250 300 350 400 450 500 550 600 650
VIN=3.6V
VIN=2.4V VIN=1.2V
VOUT=5.0V L=22H CIN=47F COUT=47F
Output Current (mA)
Output Current (mA)
Fig. 5
Efficiency vs. Output Current (ref. to Fig.35)
Fig. 6
Ripple Voltage (ref. to Fig.35)
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TYPICAL PERFORMANCE CHARACTERISTICS
240
(Continued)
100 90 80
CLSEL=OUT (ILIMIT =1A)
200
Ripple Voltage (mV)
VIN=3.6V VIN=2.4V VIN=1.2V
160
Efficiency (%)
VIN=3.6V VIN=2.4V
VOUT=5.0V L=22H CIN=100F COUT=100F
400 500 600 700 800
70 60 50 40 30 20 10 0 0.01 0.1
120
80
VOUT=5V (FB=GND) CLSEL=GND (ILIMIT =0.65A)
1 10 100 1000
40
VIN=1.2V
0 0 100 200 300
Output Current (mA)
Output Current (mA)
Fig. 7
160
Ripple Voltage (ref. to Fig.35) CLSEL=GND (ILIMIT =0.65A)
Fig. 8
120
Efficiency vs. Output Current (ref. to Fig.35)
CLSEL=GND (ILIMIT =0.65A)
100
140 120 100 80 60 40
VIN=3.6V
Ripple Voltage (mV)
VIN=3.6V
Ripple Voltage (mV)
80
60
VIN=2.4V VIN=1.2V
20 0 0 50 100 150 200 250 300 350
VOUT=5.0V L=22H CIN=47F COUT=47F
400 450 500 550
40
VIN=2.4V VIN=1.2V
0 100 200 300
20
VOUT=5.0V L=22H CIN=100F COUT=100F
400 500 600
0
Output Current (mA)
Output Current (mA)
Fig. 9
100 90 80 70
Ripple Voltage (ref. to Fig.35)
260 240 220
Fig. 10
Ripple Voltage (ref. to Fig.35)
CLSEL=OUT (ILIMIT =1A)
Ripple Voltage (mV)
VIN=1.2V VIN=2.4V
200 180 160 140 120 100 80 60 40 20 0
Efficiency (%)
60 50 40 30 20 10 0 0.01 0.1 1
VIN=2.4V
VOUT=3.3V L=22H CIN=47F COUT=47F
300 350 400 450 500 550 600
VOUT=3.3V (FB=OUT) CLSEL=OUT (ILIMIT =1A)
10 100 1000
VIN=1.2V
0
50
100
150
200
250
Output Current (mA)
Output Current (mA)
Fig. 11
Efficiency vs. Output Current (ref. to Fig.34)
Fig. 12
Ripple Voltage (ref. to Fig.34)
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TYPICAL PERFORMANCE CHARACTERISTICS
100 140 120
(Continued)
90 80
CLSEL=OUT (ILIMIT =1A)
Ripple Voltage (mV)
Efficiency (%)
100 80 60 40 20
0 0
70 60 50 40 30 20 10
VIN=1.2V
VIN=2.4V
VIN=1.2V
VIN=2.4V
VOUT=3.3V CIN=100F COUT=100F
50 100 150 200 250 300 350 400 450 500 550
VOUT=3.3V (FB=OUT) CLSEL=GND (ILIMIT =0.65A)
0 0.01
1
10
100
1000
Output Current (mA)
Output Current (mA)
Fig. 13
140
Ripple Voltage (ref. to Fig.34)
Fig. 14
120
Efficiency vs. Output Current (ref. to Fig.34)
CLSEL=GND (ILIMIT =0.65A)
120
110 100
CLSEL=GND (ILIMIT =0.65A)
Ripple Voltage (mV)
100
Ripple Voltage (mV)
90 80 70 60 50 40 30 20 10 0
80
VIN=2.4V
60 40
VIN=2.4V
VOUT=3.3V L=22H CIN=100F COUT=100F
200 250 300 350 400 450 500
VIN=1.2V
20 0 0 50 100 150 200 250 300
VOUT=3.3V L=22H CIN=47F COUT=47F
350 400 450 500
VIN=1.2V
0 50 100 150
Output Current (mA)
Output Current (mA)
Fig. 15
1.26
Ripple Voltage (ref. to Fig.34)
0.50 0.45
Fig. 16
Ripple Voltage (ref. to Fig.34)
1.25
P-Channel
0.40
Reference Voltage (V)
1.24
Resistance ()
0.35 0.30 0.25 0.20 0.15
1.23
N-Channel
1.22
1.21
0.10
IREF=0
1.20 -40 -20 0 20 40 60 80
0.05 0.00 -60
VOUT=3.3V ILX=100mA
-40
-20
0
20
40
60
80
100
Temperature (C)
Temperature (C)
Fig. 17
Reference Voltage vs. Temperature
Fig. 18
Switch Resistance vs. Temperature
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TYPICAL PERFORMANCE CHARACTERISTICS
800 900
(Continued)
Maximum Output Current (mA)
Maximum Output Current (mA)
700 600 500 400 300 200 100 0
800 700 600 500 400 300 200 100 0
VOUT=3.3V (FB=OUT) CLSEL=OUT (ILIMIT=1A)
VOUT=5V (FB=GND) CLSEL=OUT (ILIMIT=1A)
CLSEL=GND (ILIMIT=0.65A)
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
CLSEL=GND (ILIMIT=0.65A)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Fig 19 .
1.2
Input Voltage (V) Maximum Output Current vs. Input Voltage
Fig. 20
160
Input Voltage (V) Maximum Output Current vs. Input Voltage
Switching Frequency fosc (kHz)
CLSEL=OUT (ILIMIT=1A)
1.0
140 120 100 80 60 40 20 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VOUT=5.0V
0.8
ILIM (A)
0.6
CLSEL=GND (ILIMIT=0.65A)
0.4
VOUT=3.3V
0.2
IOUT=100mA
0.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Fig. 21
220
Output Voltage (V) Inductor Current vs. Output Voltage
Supply Voltage (V)
Fig. 22
Switching Frequency vs. Supply Voltage
Switching Frequency fosc (kHz)
200 180 160 140 120 100 80 60 40 20 0 1 10
VIN=1.2V VOUT=3.3V
VIN=2.4V VOUT=3.3V
W /o Anti-Ringing V IN =2.4V V OUT =3.3V
VIN=2.4V VOUT=5V
VIN=3.6V VOUT=5V
100 1000
Output Current (mA)
Fig. 23
Switching Frequency vs. Output Current
Fig. 24
Without Anti-Ringing Function
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TYPICAL PERFORMANCE CHARACTERISTICS
(Continued)
LX Pin W aveform W i t h A n t i - Ringing V IN =2.4V V OUT =3.3V V IN =2.4V V O U T =3.3V Loading=200m A Inductor C urrent
V O UT A C C ouple
Fig. 25
W ith Anti-Ringing Function
F ig. 26 H eavy Load W aveform
Loading:
1m A
200m A
VIN
V IN =2.4V V O U T =3.3V V O U T : A C C ouple
VIN=2.0V~3.0V VOUT=3.3V, IOUT=100mA
VOUT
F ig. 27
Load Transient R esponse
Fig. 28
Line Transient Response
V SHDN
V SHDN
VOUT
VOUT
VOUT=3.3V C IN=COUT=47F
VOUT=3.3V CIN=COUT=100F
Fig. 29
Exiting Shutdown
Fig. 30
Exiting Shutdown
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TYPICAL PERFORMANCE CHARACTERISTICS
V SHDN
(Continued)
V SHDN
VOUT VOUT=5.0V CIN=COUT=47F
V OUT
V OUT =5.0V C IN =C OUT =100F
Fig. 31
Exiting Shutdown
Fig. 32
Exiting Shutdown
BLOCK DIAGRAM
OUT SHDN CLSEL
+
OUT 0.1F R1 200 L 47H
+
Minimum Off-Time One Shot
Q1 Q3
Damping Switch BATT LX
C3 47F
VIN
Q2 F/ F S R One Shot Maximum On-Time Q
C1 47F
GND
+
Mirror
+
LBO REF
FB
+ LBI
Reference Voltage
C4 0.1F
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PIN DESCRIPTIONS
PIN 1: FBConnected to OUT to get +3.3V output, connected to GND to get +5.0V output, or using a resistor network to set output voltage ranging from +1.8V to +5.5V. PIN 2: LBILow-battery comparator input internally set at +1.23V to trip. PIN 3: LBO- Open-drain low battery comparator output. Output is low when VLBI is <1.23V. LBO is high impedance during shutdown. PIN 4: CLSEL- Current-limit select input. CLSEL= OUT sets the current limit to 1.0A. CLSEL=GND sets the current limit to 0.65A. PIN 5: REF1.23V reference voltage. Bypass with a 0.1F capacitor. PIN 6: SHDN- Shutdown input. High=operating, low=shutdown. PIN 7: BATT- Battery input and damping switch connection. If damping switch is unused, leave BATT unconnected. PIN 8: GND- Ground. PIN 9: LXN-channel and P-channel power MOSFET drain. PIN 10: OUT- Power output. OUT provides bootstrap power to the IC.
APPLICATION INFORMATION
Overview
The SS6612 is a high-efficiency, step-up DC/DC converter, featuring a built-in synchronous rectifier, which reduces size and cost by eliminating the need for an external Schottky diode. The start-up voltage of the SS6612 is as low as 0.8V and it operates with an input voltage down to 0.7V. Quiescent supply current is only 20A. In addition, the SS6612 features a circuit that eliminates inductor ringing to reduce noise. The internal P-MOSFET on-resistance is typically 0.3 to improve overall efficiency by minimizing AC losses. The output voltage can be easily set; by two external resistors for 1.8V to 5.5V; connecting FB to OUT to get 3.3V; or connecting to GND to get 5.0V. The CLSEL pin offers a selectable current limit (1.0A or 0.65A). The lower current limit allows the use of a physically smaller inductor in spacesensitive applications. BLOCK DIAGRAM) with ultra-low quiescent current. The peak current of the internal N-MOSFET power switch is selectable. The switch frequency depends on either loading conditions or input voltage, and can range up to 500KHz. It is governed by a pair of oneshots that set a minimum off-time (1s ) and a maximum on-time (4s ).
Synchronous Rectification
Using the internal synchronous rectifier eliminates the need for an external Schottky diode, reducing the cost and board space. During the cycle of offtime, the P-MOSFET turns on and shuts the NMOSFET off. Due to the low turn-on resistance of the MOSFET, the synchronous rectifier significantly improves efficiency without an additional external Schottky diode. Thus, the conversion efficiency can be as high as 93%.
PFM Control Scheme
A key feature of the SS6612 is a unique minimumoff-time, constant-on-time, current-limited, pulsefrequency-modulation (PFM) control scheme (see
Reference Voltage
The reference voltage (REF) is nominally 1.23V for excellent T.C. performance. In addition, the REF pin can source up to 100A to an external circuit with good load
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SS6612
regulation (<10mV). A bypass capacitor of 0.1F is required for proper operation and good performance.
Low-Battery Detection
The SS6612 contains an on-chip comparator with 50mV internal hysteresis (REF, REF+50mV) for low battery detection. If the voltage at LBI falls below the internal reference voltage, LBO (an open-drain output) sinks current to GND.
Shutdown
The whole circuit is shutdown when V SHDN is low. In
shutdown mode, the current can flow from the battery to the output due to the body diode of the P-MOSFET. VOUT falls to approximately (Vin - 0.6V) and LX remains high impedance. The capacitance and load at OUT determine the rate at which VOUT decays. Shutdown can be pulled as high as 6V, regardless of the voltage at OUT.
Component Selection
1. Inductor Selection
An inductor value of 22H performs well in most applications. The SS6612 also works with inductors in the 10H to 47H range. An inductor with higher peak inductor current creates a higher output voltage ripple (IPEAKxoutput filter capacitor ESR). The inductor's DC resistance significantly affects efficiency. We can calculate the maximum output current as follows: VIN VOUT - VIN IOUT(MAX ) = ILIM - t OFF VOUT 2xL ........................................................................(2)
Current Limit Select Pin
The SS6612 allows a selectable inductor current limit of either 1.0A or 0.65A, allowing the flexibility to design for higher current or smaller applications. CLSEL draws 1.4A when connecting to OUT.
BATT/Damping Switch
The SS6612 is designed with an internal damping switch (Fig.33) to reduce ringing at LX. The damping switch supplies a path to quickly dissipate the energy stored in the inductor and reduces the ringing at LX. Damping LX ringing does not reduce VOUT ripple, but does reduce EMI. R1=200 works well for most applications while reducing efficiency by only 1%. Larger R1 values provide less damping, but less impact on efficiency. In principle, a lower value of R1 is needed to fully damp LX when VOUT /VIN ratio is high.
where IOUT(MAX)=maximum output current in amps VIN=input voltage L=inductor value in H
=efficiency (typically 0.9)
tOFF=LX switch' off-time in s ILIM=1.0A or 0.65A
2. Capacitor Selection
Selecting the Output Voltage
VOUT can be simply set to 3.3V/5.0V by connecting the FB pin to OUT/GND due to the use of an internal resistor divider in the IC (Fig.34 and Fig.35). In order to adjust the output voltage, a resistor divider is connected to VOUT, FB, GND (Fig.36). Vout can be calculated by the following equation: R5 = R6 [(VOUT / VREF )-1] .....................................(1) where V REF =1.23V and VOUT ranges from 1.8V to 5.5V. The recommended R6 is 240k.
The output ripple voltage is related to the peak inductor current and the output capacitor ESR. Besides output ripple voltage, the output ripple current may also be of concern. A filter capacitor with low ESR is helpful to the efficiency and the steady state output current of the SS6612. Therefore a NIPPON MCM series tantalum capacitor of 100F/6V is recommended. A smaller capacitor (down to 47F with higher ESR) is acceptable for light loads or in applications that can tolerate higher output ripple.
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SS6612
3. PCB Layout and Grounding
and efficiency, and minimize output ripple voltage, use a ground plane and solder the IC's GND directly to the ground plane. Fig.37 to 39 are the recommended layout diagrams.
Since the SS6612's switching frequency can range up to 500kHz, the SS6612 can be very sensitive. Careful printed circuit layout is important for minimizing ground bounce and noise. The OUT pin should be as clear as possible, and the GND pin should be placed close to the ground plane. Keep the IC's GND pin and the ground leads of the input and output filter capacitors less than 0.2in (5mm) apart. In addition, keep all connections to the FB and LX pins as short as possible. In particular, when using external feedback resistors, locate them as close to the FB as possible. To maximize output power
Ripple Voltage Reduction
Two or three parallel output capacitors can significantly improve the output ripple voltage of the SS6612. The addition of an extra input capacitor results in a stable output voltage. Fig.40 shows the application circuit with the above features. Fig. 41 to 48 show the performance of Fig.40.
APPLICATION EXAMPLES
VOUT R1 200 BATT R1 200 VIN
L1 22H
VIN L 22H LX OUT LBI R4 0.1F C4 REF LBO GND FB LOW BATTERY OUTPUT CLSEL SHDN R2 100K C2 0.1F C3 47F VOUT C1 47F
OUT Q1
DAMPING SWITCH Q3 BATT
R3
LX Q2 SS6612 GND
SS6612 L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER
Fig.33 Simplified Damping Switch Diagram
VIN R1 200 BATT R3 LBI R4 0.1F C4 GND SS6612 L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER REF LBO FB LOW BATTERY OUTPUT L 22H LX OUT CLSEL SHDN R2 100K
0.1F C4
Fig.34 VOUT = 3.3V Application Circuit.
VIN R1 200 BATT R3 CLSEL LBI R4 REF LBO GND SS6612 FB R6 LOW BATTERY OUTPUT SHDN 100K R2 L 22H LX VOUT
OUT
C1 47F VOUT
C1 47F
C2 0.1F R5
C2 0.1F
C3 47F
C3 47F
L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER V OUT=V REF*(1+R5/R6)
Fig.35 VOUT = 5.0V Application Circuit.
Fig.36 An Adjustable Output Application Circuit
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Fig.37 Top layer
Fig.38 Bottom layer
Fig.39 Placement
VIN
Connect to OUT for 3.3V output voltage Connect to GND for 5.0V output voltage Open for adjustable output voltage; VOUT=1.23(1+R5/R6) JU1 R5 VOUT R6
1 2
VIN L1 + 22H
VIN C1
6V/100F + C2 6V/100uF
R3 VOUT R2 100K
FB LBI
OUT 10 LX 9 GND 8 R1 200 VIN JU3
D1 is Optional
VOUT + + +
R4
3 4
LBO CLSEL BATT 7 REF SS6612 SHDN 6
JU2 Connect to OUT for 1.0A limit Connect to GND for 0.8A limit
5
C4 1F
C5
C6
C7
6V/100F
6V/100F
6V/100F
C3 0.1F
L1: TDK SLF7045T-22OMR90 C1~C2, C5~7: NIPPON Tantalum Capacitor 6MCM107MCTER
Connect to GND for shutdown Connect to VOUT for normal
Fig.40 SS6612 application circuit with small ripple voltage
100 95 90 85 80 60
VIN=3.6V
50
CLSEL=OUT (ILIMIT =1A)
Ripple Voltage (mV) VIN=3.6V
40
Efficiency (%)
75 70 65 60 55 50 45 40 35 30 0.01 0.1
VIN=2.4V
30
CLSEL=OUT (ILIMIT =1A)
VOUT=5.0V VIN=1.2V
1 10
20
VIN=2.4V VIN=1.2V VOUT=5.0V L=22H
0 100 200 300 400 500 600 700
10
L=22H
0 100 1000
Output Current (mA)
Output Current (mA)
Fig. 41
Efficiency (ref. to Fig.40)
Fig. 42
Ripple Voltage (ref. to Fig.40)
Rev.2.02 12/06/2003
www.SiliconStandard.com
14 of 16
SS6612
60 95 90 85 80 60
VIN=3.6V
50
CLSEL=GND (ILIMIT =0.65A)
Ripple Voltage (mV) VIN=3.6V
40
Efficiency (%)
75 70 65 60 55 50 45 40 35 30 25 0.01
VIN=2.4V
30
CLSEL=GND (ILIMIT =0.65A)
VIN=1.2V VOUT=5.0V
20
VIN=2.4V
10
VOUT=5.0V L=22H
L=22H
0 0.1 1 10 100 1000 0
VIN=1.2V
100 200 300
400
500
Output Current (mA)
Output Current (mA)
Fig. 43
100 95 90
Efficiency (ref. to Fig.40)
50
Fig. 44
Ripple Voltage (ref. to Fig.40)
VIN=2.4V Ripple Voltage (mV)
45 40 35 30 25 20 15 10 5 0
CLSEL=OUT (ILIMIT =1A)
85
Efficiency (%)
80 75 70 65 60 55 50 45 40 0.01 0.1 1 10
VIN=1.2V
VIN=2.4V VOUT=3.3V L=22H
0 50 100 150 200 250 300 350 400 450 500 550 600
CLSEL=OUT (ILIMIT =1A)
VOUT=3.3V L=22H
100 1000
VIN=1.2V
Output Current (mA)
Output Current (mA)
Fig. 45
100 95 90
Efficiency (ref. to Fig.40)
35
Fig. 46
Ripple Voltage (ref. to Fig.40)
CLSEL=GND (ILIMIT =0.65A)
30
Ripple Voltage (mV)
85
25
Efficiency (%)
80 75 70 65 60 55 50 45 40 0.01 0.1
VIN=2.4V
20
VIN=2.4V
15
CLSEL=GND (ILIMIT =0.65A)
VOUT=3.3V VIN=1.2V
1 10
10
VIN=1.2V
5
VOUT=3.3V L=22H
L=22H
100 1000
0 0 50 100 150 200 250 300 350 400
Output Current (mA)
Output Current (mA)
Fig. 47 Efficiency (ref. to Fig.40)
Fig. 48
Ripple Voltage (ref. to Fig.40)
Rev.2.02 12/06/2003
www.SiliconStandard.com
15 of 16
SS6612
PHYSICAL DIMENSIONS
10 LEAD MSOP (unit: mm)
D
SYMBOL A1 A2
E E1
MIN -0.76 0.15 0.13 2.90 4.80 2.90 0.50 0.40
MAX 0.20 0.97 0.30 0.23 3.10 5.00 3.10 0.66
b C D E
e A2 C
A1
E1 e L
L
b
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
Rev.2.02 12/06/2003
www.SiliconStandard.com
16 of 16


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