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| SSM9408GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic BVDSS RDS(ON) ID 30V 10m 57A G S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (SSM9408GH) are available for low-profile applications. G D G D S TO-252(H) Pb-free; RoHS-compliant S TO-251(J) ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 20 57 41 228 53.6 0.36 -55 to 175 -55 to 175 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units /W /W 02/21/2008 Rev.1.00 www.SiliconStandard.com 1 SSM9408GH ELECTRICAL CHARACTERISTICS (TJ=25 C unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=175 C) o o Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.02 30 13 2.2 7 8 6 24 9 860 210 150 2 Max. Units 10 12 2.5 1 500 100 21 1380 3 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=250uA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=10V, ID=30A VGS=4.5V, ID=20A VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=10A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 SOURCE-DRAIN DIODE Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=30A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/s Min. - Typ. 23 17 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 02/21/2008 Rev.1.00 www.SiliconStandard.com 2 SSM9408GH 120 100 T C =25 C 100 o ID , Drain Current (A) 80 ID , Drain Current (A) 10V 7.0 V 5.0V 4.5 V V G = 3.0 V T C =175 o C 80 10V 7 .0V 5.0V 4.5 V V G =3.0V 60 60 40 40 20 20 0 0.0 1.0 2.0 3.0 4.0 0 0.0 2.0 4.0 6.0 8.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 14 2.0 I D =20A o T C =25 C 12 1.6 I D =30A V G =10V Normalized RDS(ON) RDS(ON) (m) 10 1.2 8 0.8 6 2 4 6 8 10 0.4 -50 0 50 100 150 200 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 30 1.2 20 T j =175 o C IS(A) T j =25 o C Normalized VGS(th) (V) 1.2 0.8 10 0.4 0 0 0.4 0.8 0.0 -50 0 50 100 150 200 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode 02/21/2008 Rev.1.00 Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 www.SiliconStandard.com SSM9408GH 16 10000 f=1.0MHz VGS , Gate to Source Voltage (V) I D =10A 12 C (pF) V DS =16V V DS =20V V DS =24V 8 1000 C iss 4 C oss C rss 0 0 10 20 30 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Duty factor = 0.5 100 Normalized Thermal Response (Rthjc) 100us ID (A) 10 0.2 0.1 0.1 0.05 1 T C =25 C Single Pulse o 1ms 10ms 100ms DC PDM t 0.02 0.01 T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 120 V DS =5V 100 VG T j =25 o C T j =175 o C ID , Drain Current (A) QG 80 4.5V 60 QGS QGD 40 20 Charge 0 Q 0 1 2 3 4 5 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 02/21/2008 Rev.1.00 Fig 12. Gate Charge Waveform 4 www.SiliconStandard.com SSM9408GH Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 02/21/2008 Rev.1.00 www.SiliconStandard.com 5 |
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