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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
DESCRIPTION *Collector-Emitter Breakdown Voltage-- : V(BR)CEO =-60 V *DC Current Gain-- : hFE = 750(Min) @ IC=-1.5 A *Complement to Type MJE800
MJE700
APPLICATIONS *Designed for general-purpose amplifier and low-speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VALUE -60
UNIT V
Collector Current-Continuous Base Current
PC Ti Tstg
Collector Power Dissipation TC=25 Junction Temperature Storage Temperature Range
w w
PARAMETER
scs .i w
-60 -5 V V -4 A -0.1 40 150 -55~150 A W
.cn mi e
THERMAL CHARACTERISTICS
SYMBOL Rth j-c MAX 3.13 UNIT /W
Thermal Resistance, Junction to Case
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
MJE700
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC=-50mA; IB= 0
-60
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC=-1.5A; IB= -30mA
-2.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -4A; IB=-40mA
B
-3.0
V
VBE(on)-1
Base-Emitter On Voltage
IC= -1.5A; VCE= -3V
-2.5
V
VBE(on)-2
Base-Emitter On Voltage
IC= -4A; VCE= -3V
-3.0
V
ICEO
Collector Cutoff Current
VCE=-60V; IB= 0
B
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
w w
scs .i w
VCB=-60V; IE= 0 VCB=-60V; IE= 0;TC= 100 VEB=-5V; IC= 0
IC=- 1.5 A ; VCE= -3V
.cn mi e
-0.1 -0.1 -0.5 -2.0
mA
mA
mA
750
IC= -4A ; VCE= -3V
100
isc Websitewww.iscsemi.cn

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Price & Availability of MJE700

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJE700G 26K4470	onsemi	Darlington Transistor, Pnp, -60V, To-225; Transistor Polarity:Pnp; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:60V Rohs Compliant: Yes \|Onsemi MJE700G		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJE700G MJE700GOS-ND	onsemi	TRANS PNP DARL 60V 4A TO126		0
MJE700STU MJE700STU-ND	onsemi	TRANS PNP DARL 60V 4A TO126-3		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJE700	onsemi			114
MJE700	onsemi			72
MJE700	Motorola Semiconductor Products			207

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJE700		Bipolar Junction Transistor, Darlington, PNP Type, TO-126	126: USD0.4 32: USD0.48 1: USD0.8	376
MJE700	Motorola Semiconductor Products	Bipolar Junction Transistor, Darlington, PNP Type, TO-126	5: USD1.046 1: USD1.3075	4
MJE700	Motorola Semiconductor Products	Bipolar Junction Transistor, Darlington, PNP Type, TO-126	151: USD1.85 69: USD2 1: USD4	316
MJE700T	Motorola Semiconductor Products	Bipolar Junction Transistor, Darlington, PNP Type, TO-220AB	28: USD2.5 9: USD2.75 1: USD3.75	60

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJE700	onsemi	Our Stock		33
MJE700G	onsemi	Our Stock		8

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJE700	Motorola Semiconductor Products			66
MJE700	MFG UPON REQUEST			1086
MJE700G	MFG UPON REQUEST			8071
MJE700T	MFG UPON REQUEST			24
MJE700T	Motorola Semiconductor Products			95

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJE700G	onsemi	MJE700G		0

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