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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4595 DESCRIPTION *With TO-220Fa package *Low collector saturation voltage *Wide area of safe operation APPLICATIONS *For power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 60 5 12 30 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4595 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 60 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=50A , IC=0 IC=6A, IB=0.3A 5 V Collector-emitter saturation voltage 0.3 V VBEsat Base-emitter saturation voltage IC=6A, IB=0.3A 1.2 V A A ICBO Collector cut-off current VCB=100V, IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=2A ; VCE=2V 60 320 fT Transition frequency IC=0.5A ; VCE=10V 120 MHz hFE Classifications D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4595 Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 |
Price & Availability of 2SC4595
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