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| Si5935CDC Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.100 at VGS = - 4.5 V - 20 0.120 at VGS = - 2.5 V 0.156 at VGS = - 1.8 V ID (A) - 4g - 4g - 3.8 6.2 nC a FEATURES Qg (Typ.) * TrenchFET(R) Power MOSFETs * 100 % Rg Tested APPLICATIONS * Load Switch for Portable Devices * Battery Switch RoHS COMPLIANT 1206-8 Chip-FET (R) 1 S1 D1 D1 D2 D2 G1 S2 G2 S1 S2 Marking Code DK XXX G1 Lot Traceability and Date Code G2 Part # Code Bottom View Ordering Information: SI5935CDC-T1-E3 (Lead (Pb)-free) D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS Limit - 20 8 - 4g - 3.8 - 3.1b, c - 2.5b, c - 10 - 2.6 - 1.7b, c 3.1 2.0 1.3b, c 0.8b, c - 55 to 150 260 A Unit V Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, f t5s Maximum C/W Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 130 C/W. g. Package limited. Document Number: 68965 S-82573-Rev. A, 27-Oct-08 www.vishay.com 1 Symbol RthJA RthJF Typ. 77 33 Max. 95 40 Unit Si5935CDC Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Dynamic a Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = - 250 A ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 3.1 A VGS = - 2.5 V, ID = - 2.8 A VGS = - 1.8 V, ID = - 2.5 A VDS = - 10 V, ID = - 3.1 A Min. - 20 Typ.a Max. Unit V - 19 2.5 - 0.4 - 1.0 - 100 -1 -5 - 10 0.083 0.100 0.130 9.5 0.100 0.120 0.156 mV/C V nA A A S 455 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 5 V, ID = - 3.1 A VDS = - 10 V, VGS = - 4.5 V, ID = - 3.1 A f = 1 MHz 1.22 70 54 7 6.2 0.85 1.75 6.1 12.2 11 9.3 nC pF Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 3 VDD = - 10 V, RL = 4.2 ID - 2.4 A, VGEN = - 8 V, Rg = 1 11 21 6 10 VDD = - 10 V, RL = 4.2 ID - 2.4 A, VGEN = - 4.5 V, Rg = 1 32 25 6 TC = 25 C IS = - 2.4 A, VGS = 0 V - 0.8 21 IF = - 2.4 A, dI/dt = 100 A/s, TJ = 25 C 13 17 4 6 17 32 12 20 48 38 12 - 2.6 - 10 - 1.2 32 20 V ns nC ns A ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68965 S-82573-Rev. A, 27-Oct-08 Si5935CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 VGS = 5 thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 2.4 3.0 6 1.8 TC = 25 C 1.2 TC = 125 C 0.6 4 VGS = 1.5 V 2 VGS = 1 V 0 0 1 2 3 4 5 TC = - 55 C 0.0 0.0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 900 Transfer Characteristics R DS(on) - On-Resistance () 0.16 C - Capacitance (pF) VGS = 1.8 V 0.12 VGS = 2.5 V VGS = 4.5 V 0.08 750 600 Ciss 450 300 Coss 150 Crss 0.04 0.00 0 2 4 6 8 10 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 5 ID = 3.1 A VGS - Gate-to-Source Voltage (V) 4 R DS(on) - On-Resistance VDS = 10 V 3 VDS = 16 V 2 1.3 (Normalized) 1.5 Capacitance VGS = - 2.5 V, ID = - 2.8 A 1.1 VGS = - 4.5 V, ID = - 3.1 A 0.9 1 0 0 1 2 3 4 5 6 7 8 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 68965 S-82573-Rev. A, 27-Oct-08 On-Resistance vs. Junction Temperature www.vishay.com 3 Si5935CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.18 ID = - 3.1 A 0.15 R DS(on) - On-Resistance () I S - Source Current (A) 10 0.12 TJ = 125 C 0.09 TJ = 25 C 1 TJ = 150 C TJ = 25 C 0.06 0.03 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 0.00 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.8 40 On-Resistance vs. Gate-to-Source Voltage 0.7 30 0.6 VGS(th) (V) ID = 250 A 0.5 Power (W) 20 0.4 10 0.3 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10-4 10-3 10-2 10-1 1 10 100 1000 TJ - Temperature (C) Time (s) Threshold Voltage 100 Single Pulse Power Limited by RDS(on)* I D - Drain Current (A) 10 100 s 1 1 ms 10 ms 0.1 TA = 25 C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 ms 1 s, 10 s DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 68965 S-82573-Rev. A, 27-Oct-08 Si5935CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 6 5 I D - Drain Current (A) 4 Package Limited 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* 4.0 1.2 3.2 0.9 Power (W) 2.4 Power (W) 0 25 50 75 100 125 150 0.6 1.6 0.3 0.8 0.0 0.0 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Ambient Temperature (C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68965 S-82573-Rev. A, 27-Oct-08 www.vishay.com 5 Si5935CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68965. www.vishay.com 6 Document Number: 68965 S-82573-Rev. A, 27-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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