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Ordering number : ENA0941
EC4406C
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
EC4406C
Features
* *
General-Purpose Switching Device Applications
1.5V drive. Halogen Free compliance (UL94 HB).
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% When mounted on glass epoxy substrate (145mm80mm1.6mm) Conditions Ratings 60 10 200 800 0.15 150 --55 to +150 Unit V V mA mA W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=100A VDS=10V, ID=100mA ID=100mA, VGS=4V ID=50mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 0.4 280 480 2.2 2.4 3.5 26 5.9 3.2 2.9 3.4 7.0 Ratings min 60 1 10 1.3 typ max Unit V A A V mS pF pF pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11608PE TI IM TC-00001132 No. A0941-1/4
EC4406C
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=4V, ID=200mA VDS=30V, VGS=4V, ID=200mA VDS=30V, VGS=4V, ID=200mA IS=200mA, VGS=0V Ratings min typ 18.5 26 146 69 1.0 0.2 0.2 0.83 1.2 max Unit ns ns ns ns nC nC nC V
Package Dimensions
unit : mm (typ) 7036-001
Top View 0.8
Type No. Indication
Electrical Connection
Polarity mark (Top)
AP
Gate Drain
4
1.0
3
Top view
Source *Electrodes : on the bottom Top view Polarity mark (Top) Drain
1
2
Polarity Discriminating Mark
0.6
Gate Source
0.5 0.2
0.3
1
0.6
2
4
Bottom View
3
1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : ECSP1008-4
Switching Time Test Circuit
VIN 4V 0V VIN ID=200mA RL=150 VOUT VDD=30V
D
PW=10s D.C.1% Rg
G
P.G
EC4406C 50
S
Rg=1.2k
No. A0941-2/4
EC4406C
200 180 160
ID -- VDS
V 6.0V 4.0V
300
ID -- VGS
VDS=10V
2.0
V 1.5 V
250
Drain Current, ID -- mA
2.5 V
8.0
140 120 100 80 60 40 20 0 0 0.1
Drain Current, ID -- mA
200
150
100
0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 IT11275
Drain-to-Source Voltage, VDS -- V
10 9 8 7 6
IT11274 7
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
6
5
50mA
5
4
100mA
4 3 2 1 0 0 2 4 6 8 10 IT11276
V, =1.5 VGS
10 I D=
3
2
ID=10mA
mA =50 V, I D =2.5 mA VGS 100 I D= .0V, =4 VGS
1 0 --60
--40
--20
0
20
40
--25 C
mA
60 80
Ta =7 5
VGS=1.0V
50
C 25 C
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- C
1000 7 5 3 2
IT11277
Forward Transfer Admittance, yfs -- mS
1000 7 5 3
yfs -- ID
IS -- VSD
VGS=0V
VDS=10V
Source Current, IS -- mA
2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT11278
= Ta
1.0 7 5 3 2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Drain Current, ID -- mA
3 2
SW Time -- ID
VDD=30V VGS=4V
7 5 3
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Ta= 75 25 C C --25 C
C 75 5C --2 5C 2
100 7 5 3 2 10 7 5 3 2
IT11322
Switching Time, SW Time -- ns
1000
Ciss
Ciss, Coss, Crss -- pF
7 5 3 2
2
td(off)
10 7 5 3 2
tf
100 7 5 3 2 10 0.001
Coss
Crss
td(on)
2 3 5 7 0.01 2 3
tr
1.0 5 7 0.1 2 3 57 IT11279 0 5 10 15 20 25 30 35 40 45 50 55 60
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
IT11280
No. A0941-3/4
EC4406C
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VGS -- Qg
Allowable Power Dissipation, PD -- W
VDS=30V ID=200mA
0.16 0.15 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0 20 40
PD -- Ta
When mounted on glass epoxy substrate (145mm80mm1.6mm)
Gate-to-Source Voltage, VGS -- V
60
80
100
120
140
160
Total Gate Charge, Qg -- nC
IT11281
Ambient Temperature, Ta -- C
IT12961
Note on usage : Since the EC4406C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of January, 2008. Specifications and information herein are subject to change without notice.
PS No. A0941-4/4

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