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SMD Schottky Barrier Diode SMD Diodes Specialist CDBU54-HF (RoHS Device) Io = 200 mA VR = 30 Volts Features Halogen free. Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0.071(1.80) 0.063(1.60) 0603(1608) Mechanical data 0.033(0.85) Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BF Mounting position: Any Weight: 0.003 gram(approx.). 0.027(0.70) 0.014(0.35) Typ. 0.012 (0.30) Typ. 0.028(0.70) Typ. Dimensions in inches and (millimeter) Maximum Rating (at TA=25 C unless otherwise noted) O Parameter Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Repetitive peak forward current Forward current,surge peak Power dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit VRM VR VR(RMS) IO IFRM 30 30 21 200 0.3 0.6 150 -65 +125 +125 V V V mA A A mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) IFSM PD TSTG Tj C C O Electrical Characteristics (at TA=25 C unless otherwise noted) O Parameter Forward voltage IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VR = 25V Conditions Symbol Min Typ Max Unit VF 0.24 0.32 0.4 0.5 1 2 10 5 V Reverse current Capacitance between terminals Reverse recovery time IR CT Trr uA pF nS REV:A f = 1 MHz, and 1 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm QW-G1017 Page 1 Comchip Technology CO., LTD. SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBU54-HF) Fig. 1 - Forward characteristics 1000 1m Fig. 2 - Reverse characteristics Reverse current ( A ) Forward current (mA ) 100u 125 C O 100 10u 75 C O 10 1u 1 C 75 C C O 125 O -25 O C 100n 25 C -25 C O O O 0.1 0 0.2 0.4 0.6 0.8 25 10n 0 5 10 15 20 25 30 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics Capacitance between terminals (PF) 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 120 Fig.4 - Current derating curve Average forward current(%) f=1MHz O TA=25 C Mounting on glass epoxy PCBs 100 80 60 40 20 0 0 25 50 75 100 O 125 150 Reverse voltage (V) Ambient temperature ( C) REV:A QW-G1017 Page 2 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Reel Taping Specification P0 P1 d Index hole E T F B Polarity W C P A 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 1.00 0.10 0.039 0.004 B 1.85 0.10 0.073 0.004 C 1.00 0.10 0.039 0.004 d 1.55 0.05 0.061 0.002 D 178 1 7.008 0.04 D1 60.0 MIN. 2.362 MIN. D2 13.0 0.20 0.512 0.008 U/0603 (mm) (inch) SYMBOL E 1.75 0.10 0.069 0.004 F 3.50 0.05 0.138 0.002 P 4.00 0.10 0.157 0.004 P0 4.00 0.10 0.157 0.004 P1 2.00 0.05 0.079 0.004 T 0.23 0.05 0.009 0.002 W 8.00 0.20 0.315 0.008 W1 13.5 MAX. 0.531 MAX. U/0603 (mm) (inch) REV:A QW-G1017 Page 3 Comchip Technology CO., LTD. SMD Schottky Barrier Diode Marking Code Park Number CDBU54-HF Marking Code BF BF Suggested PAD Layout U/0603 SIZE (mm) A B C D E 1.70 0.60 0.80 2.30 1.10 (inch) 0.067 0.024 0.031 C D A E 0.091 B 0.043 Standard Package Qty per Reel Case Type (Pcs) U/0603 4000 Reel Size (inch) 7 REV:A QW-G1017 Page 4 Comchip Technology CO., LTD. |
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