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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY54
DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min.) *Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A *High Switching Speed
APPLICATIONS *Designed for general-purpose switching and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB
B
PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous Base Current Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature
w w
scs .i w
VALUE 180 120 7 12 5 60 200 -65~200
UNIT V
.cn mi e
V V A A
PC TJ Tstg
W
isc Websitewww.iscsemi.cn
1
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICEX IEBO hFE fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 100mA; IB= 0 IC= 4A; IB= 0.4A
B
BDY54
MIN 120
TYP.
MAX
UNIT V
1.1 2.2 2.0 2.5 15 3.0
V V V V mA mA
IC= 7A; IB= 1.4A
B
IC= 4A; IB= 0.4A
B
IC= 7A; IB= 1.4A
B
VCE= 150V;VBE=-1.5V,TC=150 VEB= 7V; IC= 0
Current Gain-Bandwidth Product
Switching Times ton toff
Turn-On Time Turn-Off Time
w w
scs .i w
IC= 5A; IB= 1A
B
IC= 2A; VCE= 1.5V
IC= 0.5A; VCE= 4V; f=10MHz
.cn mi e
20 20 0.3 1.8
MHz
s s
IC= 5A; IB1= 1A; IB2= -0.5A
isc Websitewww.iscsemi.cn
2


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