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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1793 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V (Min.) *High Switching Speed APPLICATIONS *Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCEO VCBO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VALUE 100 UNIT V Collector Current-Continunous Collector Current-Peak Base Current-Continunous Base Current-Peak w w scs .i w 100 7 V V 10 A 15 A 0.5 1.0 50 150 -55~150 A A .cn mi e IBM PC Tj Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 5A; IB= 10mA B 2SD1793 MIN TYP. MAX 1.5 2.0 0.1 0.1 5 UNIT V V mA mA mA VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT IC= 5A; IB= 10mA B VCB= 100V; IE= 0 VCE= 100V; IB= 0 VEB= 7V; IC= 0 Switching Times; Resistive Load Turn-On Time Storage Time Fall Time ton ts tf w w w. .cn mi cse is IC= 5A, VCE= 3V 1500 IC= 1A; VCE= 10V IC= 5A; IB1= 5mA; IB2= 10mA; VBB2= 4V; RL= 6 30000 20 MHz 2 12 5 s s s isc Websitewww.iscsemi.cn |
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