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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION BAS85 SCHOTTKY DIODES FEATURES * Fast Switching Device(TRR<4.0nS) * Mini MELF Glass Case (SOD-80) * Through-Hole Device Type Mounting * Hermetically Sealed Glass * Compression Bonded Construction * All external surfaces are corrosion resistant and leads are readily solderable SOD-80 .016(0.40) .008(0.20) .059(1.5) .055(1.4) .142(3.6) .134(3.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Maximum Forward Comtinuous Reverse Voltage Maximum Forward Comtinuous Current @ T A =25 OC Maximum Peak Forward Current @ T A =25 OC Surge Forward Current @ tp<1s,T A =25 OC Maximum Power Dissipation @ T A =65 OC Junction Temperature Storage Temperature Range SYMBOL VR IF IFM IFSM PD TJ TSTG BAS85 30 200 300 600 200 125 -65 to + 150 UNITS V mAmps mAmps mAmps mW O o C C O ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Reverse breakdown voltage (IR=10A) Reverse voltage leakage current (VR=25V) (IF=0.1mA) (IF=1mA) Forward voltage Pulse Tesx tp<300s,<2% (IF=10mA) (IF=30mA) (IF=100mA) Diode capacitance (VR=1,f=1MHz) Reveres recovery time (IF=IR=10mA,IR=1mA) CD VF SYMBOL V(BR)R IR MIN. 30 TYP. 0.5 MAX. 2 0.24 0.32 0.4 0.8 10 5 pF nS 2006-3 V UNITS V A trr |
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