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APT35GA90BD15 APT35GA90SD15
900V High Speed PT IGBT
(R)
TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short G C delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the E poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode)
(B)
D3PAK
C E
(S)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Gate-Emitter Voltage
2
Ratings
900 63 35 105 30 290 105A @ 900V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 18A VCE = 900V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
900
Typ
2.5 2.2 4.5
Max
3.1 6 350 1500 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6344 Rev D 7 - 2009
VGS = 30V
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on) tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 18A TJ = 150C, RG = 104, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 18A RG = 104 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V IC = 18A RG = 104 TJ = +125C 105
APT35GA90BD_SD15
Min Typ
1934 173 28 84 14 34 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
A 12 15 104 86 642 382 11 14 154 144 1044 907 J ns J ns
Thermal and Mechanical Characteristics
Symbol
RJC RJC WT Torque
Characteristic
Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
-
Max
.43 1.18
Unit
C/W g in*lbf
-
5.9
10
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6344 Rev D 7 - 2009
Typical Performance Curves
60 50 40 30 20 10 0
V
GE
APT35GA90BD_SD15
250 15V 13V IC, COLLECTOR CURRENT (A) 200 11V 10V 100 9V 8V 50 7V 6V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 18A C T = 25C
J
= 15V
TJ= 125C TJ= 55C TJ= 25C TJ= 150C
IC, COLLECTOR CURRENT (A)
150
0
1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0
100
16 14 12 10 8 6 4 2 0
IC, COLLECTOR CURRENT (A)
80
VCE = 180V VCE = 450V VCE = 720V
60
40 TJ= -55C 20 TJ= 25C TJ= 125C 0 0 2 4 6 8 10 12 14
0
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC = 36A 3 IC = 18A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
5
40 60 80 GATE CHARGE (nC) FIGURE 4, Gate charge
100
4
IC = 36A
3
2
IC = 3A
IC = 18A
2
IC = 3A
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
1
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
0
6
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
0
0
25
80 70 IC, DC COLLECTOR CURRENT (A) 60 50 40 052-6344 Rev D 7 - 2009 30 20 10 50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 0 25
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
Typical Performance Curves
15 td(ON), TURN-ON DELAY TIME (ns)
VCE = 600V TJ = 25C, or 125C RG = 10 L = 100H
APT35GA90BD_SD15
200 td(OFF), TURN-OFF DELAY TIME (ns)
14
160
VGE =15V,TJ=125C
13
120
12
80
VGE =15V,TJ=25C
11
40
VCE = 600V RG = 10 L = 100H
10
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 50 RG = 10, L = 100H, VCE = 600V 45 40 35
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 180 160 140 tr, FALL TIME (ns) 120 100 80 60 40 20 0
RG = 10, L = 100H, VCE = 600V TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V
0
tr, RISE TIME (ns)
30 25 20 15 10 5 0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 0
TJ = 25 or 125C,VGE = 15V
2500 Eon2, TURN ON ENERGY LOSS (J)
EOFF, TURN OFF ENERGY LOSS (J)
V = 600V CE V = +15V GE R =10
G
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2500 2250 2000 1750 1500 1250 1000 750 500 250 0
TJ = 25C TJ = 125C
V = 600V CE V = +15V GE R = 10
G
2000
TJ = 125C
1500
1000
TJ = 25C
500
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 3500 SWITCHING ENERGY LOSSES (J) 3000 2500 2000 1500
Eon2,18A Eoff,36A
0
0 5 10 15 20 25 30 35 40 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 3000 SWITCHING ENERGY LOSSES (J)
V = 600V CE V = +15V GE R = 10
G
V = 600V CE V = +15V GE T = 125C
J
Eon2,36A
2500 2000 1500 1000 500 0
Eon2,36A
Eoff,36A
052-6344 Rev D 7 - 2009
Eon2,18A Eoff,18A Eon2,9A Eoff,9A
1000 500 0
Eoff,18A
Eon2,9A Eoff,9A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10,000 Cies 1,000 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 200 100
APT35GA90BD_SD15
10
100 Coes 10 Cres 0 200 400 600 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 1
1
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.50 ZJC, THERMAL IMPEDANCE (C/W) 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10
-5
D = 0.9
0.7 0.5
Note:
PDM
t1 t2
0.3 0.1 0.05 10-4 SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1
052-6344 Rev D 7 - 2009
APT35GA90BD_SD15
10% Gate Voltage td(on) 90% tr
V CC IC V CE
TJ = 125C
APT30DQ120
Collector Current 5% Collector Voltage
5%
10%
A D.U.T.
Switching Energy
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
052-6344 Rev D 7 - 2009
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 126C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT35GA90BD_SD15
15 29 80 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 125C
Min
Type
2.5 3.06 1.92
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 1.00 0.7 0.80 0.5
Note:
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 15A, diF/dt = -200A/s VR = 667V, TC = 25C
Min
-
Typ 20 235 185 3 300 810 6 125 1150 19
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 667V, TC = 125C
-
IF = 15A, diF/dt = -1000A/s VR = 667V, TC = 125C
-
0.60
PDM
0.40
t1 t2
0.3
0.20 0
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6344 Rev D 7 - 2009
Dynamic Characteristics
45
TJ = 25C unless otherwise specified
400 30A trr, REVERSE RECOVERY TIME (ns) 350 300 250 200 15A
APT35GA90BD_SD15
T = 125C J V = 667V
R
40 IF, FORWARD CURRENT (A) 35 30 25 20 15 10 5 0 0 TJ = 125C TJ = 25C TJ = -55C TJ = 175C
7.5A 150 100 50
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 2000 Qrr, REVERSE RECOVERY CHARGE (nC) 1800 1600 1400 1200 1000 800 600 400 200 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 trr 0.8 IRRM Qrr trr 0 7.5A 15A
T = 125C J V = 667V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 667V
R
0
30A
30A
20
15 15A 10 7.5A 5
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 35 30 25 IF(AV) (A) 20 15 10 5 0
Duty cycle = 0.5 T = 175C
J
0
0.6 0.4 0.2 0.0
Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 80 CJ, JUNCTION CAPACITANCE (pF) 70 60 50 40 30 20 10 0 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 1
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
25
50
052-6344 Rev D 7 - 2009
Dynamic Characteristics
TJ = 25C unless otherwise specified
Vr
APT35GA90BD_SD15
+18V 0V
diF /dt Adjust
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
Collector (Cathode) (Heat Sink)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6344 Rev D 7 - 2009
Gate Collector (Cathode) Emitter (Anode)
Heat Sink (Collector) and Leads are Plated

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