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| LL5711 and LL6263 Small-Signal Diode Schottky Diodes Features For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the DO-35 case with type designation 1N5711 and 1N6263. Mechanical Data Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter Peak inverse voltage Power dissipation (Infinite heatsink) Maximum single cycle surge 10 us square wave Junction temperature Storage temperature range LL5711 LL6263 Symbol VRRM Ptot IFSM Tj TS Value 70 60 400 (1) Unit Volts mW Amps o 2.0 125 -55 to +150 C C o Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Reverse breakdown voltage Leakage current Forward voltage drop Junction capacitance Reverse recovery time LL5711 LL6263 Symbol V(BR)R IR VF Ctot trr Test Condition IR=10uA VR=50V IF=1.0mA IF=15mA VR=0V, f=1MHz IF=IR=5mA, recover to 0.1IR Min. 70 60 Typ. Max. 200 0.41 1.0 2.2 1 Unit Volts nA Volt pF ns Notes: 1. Valid provided that electrodes are kept at ambient temperature. 694 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) 695 |
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