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| SMG1333 -550mA, -20V,RDS(ON) 800m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 Description The SMG1333 provide the designer with the best combination of fast switching, low on-resistance S 2 L 3 Top View B 1 B C D and cost-effectiveness. D G H C J K Features * Simple Gate Drive * Small package outline * Fast switching speed H G J K L Drain Gate Source S D Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System All Dimension in mm G Marking : 1333 S Absolute Maximum Ratings Parameter Drain-Source Voltage Sate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -20 12 -550 -440 -2.5 1 0.008 Unit V V mA mA A W W/ C o o 3 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 125 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG1333 Elektronische Bauelemente -550mA, -20V,RDS(ON) 800m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current o Drain-Source Leakage Current (Tj=25 C) o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -20 _ Typ. _ Max. _ _ Unit V V/ V nA uA uA Test Condition VGS=0V, ID=-250uA Reference to 25 C,ID=-1mA VDS=VGS, ID=-250uA VGS= 12V VDS=-20V,VGS=0 VDS=-16V,VGS=0 VGS=-10V, ID=-550mA o -0.01 _ _ _ _ _ _ -0.5 _ _ _ _ -1.2 100 -1 -10 600 800 1000 Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance 2 RDS(ON) _ m[ VGS=-4.5V, ID=-500mA VGS=-2.5V, ID=-300mA _ _ Total Gate Charge 2 Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ 1.7 0.3 0.4 5 8 10 2 66 25 20 1.0 2.7 _ _ Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2 nC ID=-500mA VDS=-16V VGS=-4.5V _ _ _ _ VDS=-10V ID=-500mA nS VGS=-5V RG=3.3[ RD=20[ 105.6 _ _ pF VGS=0V VDS=-10V f=1.0MHz _ _ S VDS=-5V, ID=-550mA Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. _ Typ. _ Max. -1.2 Unit V Test Condition IS=-300mA, VGS=0V. Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG1333 Elektronische Bauelemente -550mA, -20V,RDS(ON) 800m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG1333 Elektronische Bauelemente -500mA, -20V,RDS(ON) 800m[ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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