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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Silicon Transistor VOLTAGE 50 Volts APPLICATION * Small Signal Amplifier . CHUMT1PT CURRENT 150 mAmpere FEATURE * Surface mount package. (SC-88/SOT-363) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=50mA) * Low cob. Cob=4.0pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. * Two the 2SA1037K in one package. * PNP Silicon Transistor 1.2~1.4 (1) (6) SC-88/SOT-363 0.65 0.65 2.0~2.2 (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 4 1 3 Dimensions in millimeters SC-88/SOT-363 2SA1037K LIMITING VALUES MAXIMUM RATINGES ( At TA = 25 C unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. -60 -50 -6 -150 -150 -15 150 +150 +150 +150 UNITS Volts Volts Volts mAmps mAmps mAmps mW o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. RATING CHARACTERISTIC CURVES ( CHUMT1PT ) 2SA1037K CHARACTERISTICS ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Collector Capacitance Transition Frequency CONDITION IC=-50uA IC=-1mA IE=-50uA IE=0; VCB=-60V IC=0; VEB=-6V VCE=-6V IC=-1mA IC=-50mA; IB=-5mA IE=ie=0; VCB=-12V; f=1MHz IE=2mA; VCE=-12V; f=100MHz SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCEsat Cob fT MIN. -60 -50 -6 120 4 140 TYPE MAX. -0.1 -0.1 560 -0.5 5.0 Volts pF MHz uA UNITS Volts Volts Volts RATING CHARACTERISTIC CURVES ( CHUMT1PT ) 2SA1037K Typical Electrical Characteristics Fig.1 -50 COLLECTOR CURRENT : IC (mA) Grounded emitter propagation characteristics Ta=100C 25C -40C VCE=-6V Fig.2 -10 COLLECTOR CURRENT : IC (mA) Grounded emitter output characteristics Fig.3 DC current gain vs. collector current (1) 500 Ta=25C VCE=-5V -3V -1V -35.0 Ta=25C -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 -31.5 DC CURRENT GAIN : hFE -8 -28.0 -24.5 -6 -21.0 -17.5 200 -4 -14.0 -10.5 100 -2 -7.0 -3.5A 50 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 BASE TO EMITTER VOLTAGE : VBE (V) 0 -0.4 -0.8 -1.2 -1.6 IB=0 -2.0 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (2) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig. 5 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.6 Collector-emitter saturation voltage vs. collector current -1 lC/lB=10 500 Ta=100C 25C DC CURRENT GAIN : hFE -1 VCE=-6V Ta=25C -0.5 -0.5 200 -40C 100 -0.2 IC/IB=50 -0.2 Ta=100C 25C -40C -0.1 20 10 -0.1 50 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -50 -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Gain bandwidth product vs. emitter current 1000 TRANSITION FREQUENCY : fT (MHz) Ta=25C VCE=-12V 500 200 100 50 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) |
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