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| FDG1024NZ Dual N-Channel Power Trench(R) MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench(R) MOSFET 20 V, 1.2 A, 175 m Features Max rDS(on) = 175 m at VGS = 4.5 V, ID = 1.2 A Max rDS(on) = 215 m at VGS = 2.5 V, ID = 1.0 A Max rDS(on) = 270 m at VGS = 1.8 V, ID = 0.9 A Max rDS(on) = 389 m at VGS = 1.5 V, ID = 0.8 A HBM ESD protection level >2 kV (Note 3) Very low level gate drive requirements allowing operation in 3 V circuits (VGS(th) < 1.5 V) Very small package outline SC70-6 RoHS Compliant General Description This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. G2 D1 S2 S1 1 G1 2 D2 S1 G1 D2 3 6 D1 5 G2 4 S2 SC70-6 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25C TA = 25C (Note 1a) (Note 1b) TA = 25C (Note 1a) Ratings 20 8 1.2 6 0.36 0.30 -55 to +150 Units V V A W C Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 350 415 C/W Package Marking and Ordering Information Device Marking .24 Device FDG1024NZ Package SC70-6 Reel Size 7" Tape Width 8 mm Quantity 3000 units (c)2009 Fairchild Semiconductor Corporation FDG1024NZ Rev.B 1 www.fairchildsemi.com FDG1024NZ Dual N-Channel Power Trench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, referenced to 25 C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V 20 14 1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 A ID = 250 A, referenced to 25 C VGS = 4.5 V, ID = 1.2 A VGS = 2.5 V, ID = 1.0 A rDS(on) Static Drain to Source On Resistance VGS = 1.8 V, ID = 0.9 A VGS = 1.5 V, ID = 0.8 A VGS = 4.5 V, ID = 1.2 A, TJ =125 C gFS Forward Transconductance VDD = 5 V, ID = 1.2 A 0.4 0.8 -3 160 185 232 321 220 4 175 215 270 389 259 S m 1.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10 V, VGS = 0 V, f = 1 MHz 115 25 20 4.6 150 35 25 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 4.5 V, VDD = 10 V, ID = 1.2 A VDD = 10 V, ID = 1.2 A, VGS = 4.5 V, RGEN = 6 3.7 1.7 11 1.5 1.8 0.3 0.4 10 10 19 10 2.6 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 0.3 A (Note 2) 0.7 10 1.9 0.3 1.2 20 10 A V ns nC IF = 1.2 A, di/dt = 100 A/s NOTES: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. a. 350 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 415 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. (c)2009 Fairchild Semiconductor Corporation FDG1024NZ Rev.B 2 www.fairchildsemi.com FDG1024NZ Dual N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5 V 2.5 VGS = 3.5 V VGS = 2.5 V VGS = 1.5 V VGS = 1.8 V VGS = 2.5 V 5 ID, DRAIN CURRENT (A) 2.0 VGS = 3.5 V 4 3 2 1 0 0 0.4 0.8 1.2 1.6 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 1.8 V 1.5 1.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 4.5 V VGS = 1.5 V 0.5 0 1 2 3 4 5 6 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 600 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -75 ID = 1.2 A VGS = 4.5 V rDS(on), DRAIN TO 500 400 300 200 100 0 1.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID = 1.2 A TJ = 125 oC TJ = 25 oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 6 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 5 ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 0 V VDS = 5 V 4 3 2 1 0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 125 oC TJ = -55 oC 1 TJ = 125 oC TJ = 25 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2009 Fairchild Semiconductor Corporation FDG1024NZ Rev.B 3 www.fairchildsemi.com FDG1024NZ Dual N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 5 VGS, GATE TO SOURCE VOLTAGE (V) ID = 1.2 A 300 Ciss VDD = 5 V 4 3 VDD = 10 V CAPACITANCE (pF) 100 Coss 2 VDD = 15 V 1 0 0 0.5 1.0 1.5 2.0 2.5 Qg, GATE CHARGE (nC) 10 5 0.1 f = 1 MHz VGS = 0 V Crss 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 Ig, GATE LEAKAGE CURRENT (A) 5 10 THIS AREA IS LIMITED BY rDS(on) ID, DRAIN CURRENT (A) VGS = 0 V 0.1 ms 10 3 1 1 ms 10 ms 10 TJ = 125 oC 0.1 SINGLE PULSE TJ = MAX RATED RJA = 415 oC/W TA = 25 C o 100 ms 1s DC 10 -1 TJ = 25 oC 0.01 0.01 0.1 1 10 100 10 -3 0 2 4 6 8 10 12 14 VDS, DRAIN to SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 P(PK), PEAK TRANSIENT POWER (W) VGS = 4.5 V 10 SINGLE PULSE RJA = 415 oC/W TA = 25 oC 1 0.1 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation (c)2009 Fairchild Semiconductor Corporation FDG1024NZ Rev.B 4 www.fairchildsemi.com FDG1024NZ Dual N-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE RJA = 415 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.001 -4 10 10 -3 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDG1024NZ Rev.B 5 www.fairchildsemi.com FDG1024NZ Dual N-Channel Power Trench(R) MOSFET Dimensional Outline and Pad Layout (c)2009 Fairchild Semiconductor Corporation FDG1024NZ Rev.B 6 www.fairchildsemi.com FDG1024NZ Dual N-Channel Power Trench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM PowerTrench(R) FPSTM The Power Franchise(R) Auto-SPMTM F-PFSTM PowerXSTM (R) (R) Build it NowTM FRFET Programmable Active DroopTM SM (R) CorePLUSTM Global Power Resource QFET TinyBoostTM CorePOWERTM Green FPSTM QSTM TinyBuckTM CROSSVOLTTM Green FPSTM e-SeriesTM Quiet SeriesTM TinyCalcTM CTLTM GmaxTM RapidConfigureTM TinyLogic(R) Current Transfer LogicTM GTOTM (R) TINYOPTOTM EcoSPARK IntelliMAXTM TM TinyPowerTM EfficentMaxTM Saving our world, 1mW /W /kW at a timeTM ISOPLANARTM TinyPWMTM SmartMaxTM EZSWITCHTM* MegaBuckTM TinyWireTM TM* SMART STARTTM MICROCOUPLERTM (R) TriFault DetectTM SPM MicroFETTM TRUECURRENTTM* STEALTHTM MicroPakTM (R) SuperFETTM MillerDriveTM (R) Fairchild SuperSOTTM-3 MotionMaxTM Fairchild Semiconductor(R) SuperSOTTM-6 UHC(R) Motion-SPMTM (R) FACT Quiet SeriesTM Ultra FRFETTM SuperSOTTM-8 OPTOLOGIC FACT(R) OPTOPLANAR(R) UniFETTM SupreMOSTM (R) (R) FAST VCXTM SyncFETTM FastvCoreTM VisualMaxTM Sync-LockTM FETBenchTM XSTM (R)* PDP SPMTM (R)* FlashWriter Power-SPMTM tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c)2009 Fairchild Semiconductor Corporation FDG1024NZ Rev.B 7 www.fairchildsemi.com |
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