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| 0003A SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION INK0003AX is a Silicon N-channel MOSFET. This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance. OUTLINE DRAWING INK0003AT2 (PRELIMINARY) INK0003AM1 2.1 0.2 0.8 0.2 0.425 1.25 Unitmm 0.425 0.25 0.4 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth=0.61.2V Low on Resistance. Ron=0.9(TYP) High speed switching. Small package for easy mounting. 1.2 0.8 0.65 2.0 1.3 0.4 0.9 0.65 0.7 APPLICATION high speed switching , Analog switching JEITA, JEDEC ISAHAYAT-USM TERMINAL CONNECTOR GATE SOURCE DRAIN INK0003AU1 1.6 JEITASC-70 JEDEC TERMINAL CONNECTOR GATE SOURCE DRAIN INK0003AC1 2.5 0.4 0.5 1.5 0.5 EQUIVALENT CIRCUIT D 0.4 0.8 0.3 00.1 0.15 00.1 0.16 0.4 0.5 1.6 1.0 S 0.7 0.55 0.15 1.1 JEITASC-75A JEDEC TERMINAL CONNECTOR GATE SOURCE DRAIN 00.1 JEITASC-59 JEDECSimilar to TO-236 T TERMINAL CONNECTOR GATE SOURCE DRAIN ISAHAYA ELECTRONICS CORPORATION 0.8 0.95 G 0.5 2.9 1.90 0.95 0.5 0.3 0003A SERIES High speed switching Silicon N-channel MOSFET MAXIMUM RATING SYMBOL DSS GSS D ch PARAMETER Drain-source voltage Gate-source voltage Drain current Total power dissipation Ta=25 Channel temperature Range of Storage temperature INK0003AT2 RATING INK0003AU1 INK0003AM1 20 8 200 150 +150 -55+150 200 INK0003AC1 UNIT V V mA mW 125 +125 -55+125 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time package mounted on 9mmx19mmx1mm glass-epoxy substrate. TEST CONDITION I D=100A, V V V V GS DS GS V(BR)DSS IGSS IDSS Vth | Yfs | RDS(ON) Ciss Coss tON tOFF =0V MIN 20 0.6 - LIMIT TYP 300 0.9 34 8.5 14 85 MAX 0.5 50 1.2 - UNIT V A A V mS pF pF ns =5V, VDS=0V DS= V =20V ,VGS=0V GS I D=250A, V DS =10V, I D=0.1A GS I D=100mA, V V V V V DS =4.0V =10V, V GS =0V,f=1MHz DS=10V, V DD GS GS=0V,f=1MHz =5V , I D = 10mA =05V Switching time test condition test circuit 5V IN OUT 5V 90% RL 0 10s VDD=5V D.U.1% Common source Ta=25 50 VDD input waveform 0V VDD 10% 10% output waveform VDS(ON ton 90% tr toff tf ISAHAYA ELECTRONICS CORPORATION TYPICAL CHARACTERISTICS Ta=25 100 1.6V 1.5V 1.4V ID -VDS Ta=25 1 1.0V ID -VDS(Low voltage region) 80 Drain current ID (mA) Drain current ID (mA) 0.8 60 1.3V 0.6 0.95V 40 1.2V 0.4 0.9V 20 1.1V VGS=1.0V 0.2 0.85V VGS=0.8V 0 0 2 4 6 Drain-Source voltage VDS (V) 0 10 0 0.1 0.2 0.3 Drain-Source voltage VDS (V) 8 0.4 0.5 IDR -VDS 100 Drain reverse current IDR (mA) Ta=25 VGS=0V Drain current ID (mA) 100 1000 Ta=25 VDS=10V ID -VGS 10 10 1 -0 -0.5 -1 -1.5 -2 Drain-Source voltage VDS (V) 1 0 1 2 3 4 5 Gate-Source voltage VGS (V) |Yfs| - ID 1000 Forward transfer admittance |Yfs| (mS) Ta=25 VDS=10V Drain-Source ON voltage VDS(ON) (mV) 100 100 1000 Ta=25 VGS=4V VDS(ON) -ID 10 10 1 1 1 10 100 1000 Drain current ID (mA) 0.1 1 10 Drain currentID (mA) 100 t - ID 10000 Ta=25 toff Switching time t (ns) Capacitance C (pF) 1000 100 C - VDS Ciss t 100 10 Coss 10 ton tr Ta=25 VGS=0V 1 0.1 1 10 100 1 0.1 1 10 100 Drain current ID (mA) Drain-Source voltage VDS (V) ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! *ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials *These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. *ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. *All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. *ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. *The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. *If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. *Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Apr.2007 |
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