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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD835 DESCRIPTION *High DC Current Gain: hFE= 400(Min) @IC= 4A *Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.) @ IC= 4A APPLICATIONS *Electronic ignitor *Relay& solenoid drivers *Motor controls *Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO(SUS) VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 400 UNIT V Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range w w scs .i w 350 400 15 6 0.3 40 150 -45~150 V V .cn mi e V A A PC TJ Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 3.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 1A; IB= 0 B 2SD835 MIN 350 400 400 15 TYP. MAX UNIT V V V V IC= 0.1mA; IB= 0 B IC= 0.1mA; IE= 0 IE= 100mA; IC= 0 IC= 4A; IB= 10mA B 1.5 V V mA mA IC= 4A; IB= 10mA B Switching Times ton tstg tf Turn-on Time Storage Time Fall Time w w w. sem isc VCB= 400V; IE=0 VEB= 15V; IC=0 IC= 4A; VCE= 1.5V .cn i 400 2.0 0.1 100 1.0 IC = 4A, IB1 =-IB2 = 40mA, RL = 10; Pw = 20s, DutyCycle2% 12.0 6.0 s s s isc Websitewww.iscsemi.cn 2 |
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