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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Darlington Transistor VOLTAGE 40 Volts CURRENT 0.5 Ampere CHTA29XPT APPLICATION * Preamplifier input applications. FEATURE * High current , Ic=500mA * High DC current gain , hFE>20000 4.6MAX. 1.7MAX. SC-62/SOT-89 1.6MAX. 0.4+0.05 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 MARKING * T29 1 1 Base 2 3 CIRCUIT (1) B C (2) 2 Collector ( Heat Sink ) 3 Emitter 0.8MIN. 4.6MAX. E (3) Dimensions in millimeters SC-62/SOT-89 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. 40 30 10 500 1000 200 1300 +150 150 +150 V V V mA mA mA mW C C C 2007-06 UNIT RATING CHARACTERISTIC CURVES ( CHTA29XPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = 30 V VEB = 10 V IC = 1 mA; VCE = 5V IC = 10 mA; VCE =5V IC = 100 mA; VCE = 5V IC = 500 mA; VCE = 5V IC = 100 mA; IB = 0.1 m A IC = 100 mA; IB = 0.1 m A IC = 10 mA; VCE =5V IC = 30 mA; VCE = 5 V; f = 100MHz MIN. - - 4000 10000 20000 4000 - - - 220(typ) MAX. 100 100 - - - 1.0 1.5 1.4 - V V V MHz UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 104 UNIT K/W VCE(sat) VBE(sat) VBE(ON) fT collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage transition frequency |
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