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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1737 DESCRIPTION *High Voltage *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w 1500 1500 700 7 3.5 10 1.5 V V .cn mi e V V IC Collector Current-Continuous A ICP Collector Current-Peak A IB B Base Current- Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC 60 W Tj 150 Tstg Storage Temperature Range -55-150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1737 TYP MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 8.0 V VBE(sat) hFE Base-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 1.5 V DC Current Gain IC= 0.5A; VCE= 5V VCB= 750V; IE= 0 6 30 A 10 ICBO Collector Cutoff Current VCB= 1500V; IE= 0 fT Transition Frequency Switching Times, Resistive Load ts tf Storage Time Fall Time w w scs .i w IC= 0.5A; VCE= 10V IC= 3A; IB1= 0.8A; IB2= -1.6A, VCC= 200V .cn mi e 1.0 mA 2 MHz 1.5 s s 0.2 isc Websitewww.iscsemi.cn |
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