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| SSM9985GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Low On-Resistance Fast Switching Speed Surface Mount Package D D D D G BVDSS RDS(ON) ID S 40V 15m 10A SO-8 S S DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D G S Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 20 10 8 48 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit /W 10/31/2007 Rev.1.00 www.SiliconStandard.com 1 SSM9985GM ELECTRICAL CHARACTERISTICS (TJ=25 C unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.032 Max. Units 15 25 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=10A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=10A 35 14.7 7.1 6.8 11.5 6.3 28.2 12.6 1725 235 145 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=40V, VGS=0V VDS=32V ,VGS=0V VGS= 20V ID=10A VDS=20V VGS=4.5V VDS=20V ID=1A RG=3.3,VGS=10V RD=20 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 SOURCE-DRAIN DIODE Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V Tj=25, IS=2.3A, VGS=0V Min. - Typ. - Max. Units 1.92 1.3 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad. 10/31/2007 Rev.1.00 www.SiliconStandard.com 2 SSM9985GM 50 45 T C =25 o C 40 10V 6.0V 5.0V 4.5V T C =150 o C 10V 6.0V 5.0V 4.5V ID , Drain Current (A) ID , Drain Current (A) 30 30 V GS =4.0V 20 V GS =4.0V 15 10 0 0 1 2 3 4 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2 I D =10A T C =25 60 I D =10A V GS =10V 40 Normalized RDS(ON) 2 4 6 8 10 12 1.4 RDS(ON) (m ) 0.8 20 0 0.2 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10/31/2007 Rev.1.00 www.SiliconStandard.com 3 SSM9985GM 12 3 10 ID , Drain Current (A) 8 2 6 4 PD (W) 1 0 2 0 25 50 75 100 125 150 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( C) o Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 Normalized Thermal Response (R thja) 100us 10 0.2 1ms 0.1 0.1 0.05 ID (A) 1 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T 0.1 1s T C =25 o C Single Pulse 10s DC Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=125 oC/W 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 10/31/2007 Rev.1.00 www.SiliconStandard.com 4 SSM9985GM 12 f=1.0MHz 10000 I D =10A VGS , Gate to Source Voltage (V) 9 Ciss V DS =12V V DS =16V VDS =20V 1000 6 C (pF) Coss Crss 100 3 0 0 5 10 15 20 25 10 1 7 13 19 25 31 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3.5 3 10 2.5 VGS(th) (V) Tj=150 C o Tj=25 C o IS(A) 1 2 1.5 0.1 1 0.01 0 0.4 0.8 1.2 0.5 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature 10/31/2007 Rev.1.00 www.SiliconStandard.com 5 SSM9985GM VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5 x RATED V DS RG G + 10 v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 4.5V D 0.5 x RATED V DS G S + QGS QGD VGS 1~ 3 mA IG I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 10/31/2007 Rev.1.00 www.SiliconStandard.com 6 |
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