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ECO-TOPTM 1 IGBT Module Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet S15 R15 A15 A7 A9 D1 A1 U1 V1 G15 V12 V13 K1 G1 V3 V6 N15 V9 V10 Q1 N1 PSII 30/12* IC80 = VCES = VCE(sat)typ. = 33 A 1200 V 3.1 V ECO-TOPTM 1 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol Conditions TVJ = 25C to 150C TC = 25C TC = 80C VGE = 15 V; RG = 47 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 47 ; TVJ = 125C non-repetitive TC = 25C Conditions VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VCE = 0 V; VGE = 20 V et he r se ta nd da l u e til t iv s tt en ta c n u opm te od el r ev pd Maximum Ratings 1200 20 typical picture, for pin configuration see outline drawing *NTC optional V V 49 33 A A 50 VCES A 10 s W 208 Features * Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 3.1 3.5 3.7 V V * * * * * * * * * * * * * * 4.5 6.5 V Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied VGE = 0 V; TVJ = 25C TVJ = 125C 1.1 4.2 mA mA Applications 180 nA Inductive load, TVJ = 125C VCE = 600 V; IC = 30 A VGE = 15/0 V; RG = 47 100 70 500 70 4.6 3.4 1.65 1.2 ns ns ns ns mJ mJ nF 0.6 K/W K/W AC and DC motor control AC servo and robot drives Power supplies Welding inverters Advantages Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 30 A; TVJ = 25C TVJ = 125C Maximum Ratings 49 30 A A Characteristic Values min. typ. max. 2.4 1.77 27 150 2.6 2.7 V V A ns Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight et e sh er ta nd au dl e til iv s nt e at ct t n u opm te od el r ev pd with heatsink compound (0.42 K/m.K; 50 m) IF = 30 A; diF/dt = 500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V 1.3 K/W K/W Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Conditions Maximum Ratings -40...+125 -40...+150 3000 C C IISOL 1 mA; 50/60 Hz Mounting torque (M5) V~ Max. allowable acceleration 3 26 50 Nm lb.in. m/s 2 Conditions Characteristic Values min. typ. max. Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 mm mm g 86 Package style and outline Dimensions in mm (1mm = 0.0394") 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 80 A IC VGE = 17 V 15 V 13 V 11V 80 A IC 60 VGE = 17V 15V 13V 11V 60 40 TVJ = 25C 40 20 9V 20 9V 0 42T120 TVJ = 125C 42T120 0 1 2 3 4 VCE 5 6V7 0 0 1 2 3 4 5 VCE 6V7 Fig. 1 Typ. output characteristics 80 A IC 60 40 20 TVJ = 125C 0 4 6 Fig. 3 Typ. transfer characteristics 20 V 15 VGE et he r se ta nd da l u ve stil ent ti t ta c n u opm te od el r ev pd Fig. 2 Typ. output characteristics 50 40 A 30 20 10 0 VCE = 20V IF TVJ = 125C TVJ = 25C TVJ = 25C 42T120 42T120 8 10 12 14 V 16 0 1 2 3 V 4 VGE VF Fig. 4 Typ. forward characteristics of free wheeling diode 50 40 A 30 20 10 200 160 ns 120 80 40 trr trr IRM 10 VCE = 600V IC = 25A 5 TVJ = 125C VR = 600 V IF = 15 A IRM 0 42T120 0 42T120 0 40 80 120 QG nC 160 0 200 400 600 -di/dt 800 A/s 1000 0 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 15 mJ Eon VCE = 600 V VGE = 15 V RG = 47 TVJ = 125C 150 ns 100 t Eoff 12 mJ td(off) Eoff 600 ns 400 t 10 8 VCE = 600V VGE = 15V RG = 47 TVJ = 125C td(on) tr 5 50 4 200 Eon 0 42T120 0 20 40 IC A 60 0 0 tf 0 20 40 IC A 42T120 0 60 Fig. 7 Typ. turn on energy and switching 4 mJ Eon 3 Eon 2 1 0 0 20 Fig. 9 Typ. turn on energy and switching 60 A ICM 40 t ee sh er ta nd au dl ve stil ent ti t ta c n u opm te od el pr dev td(on) 160 ns Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current td(off) 800 ns 600 t 8 mJ 120 t Eoff 6 Eoff tr 80 4 400 VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C 40 2 VCE = 600 V VGE = 15 V IC = 25 A TVJ = 125C 200 tf 42T120 40 60 80 100 0 0 42T120 0 20 40 60 80 100 0 RG RG Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor diode 10 K/W 1 RG = 47 TVJ = 125C ZthJC IGBT 0,1 0,01 0,001 single pulse 20 0 42T120 0 200 400 600 800 1000 1200 1400 V VCE 0,0001 0,00001 0,0001 0,001 MDI...50-12P1 0,01 0,1 t 1 s 10 Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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