 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMD Type HEXFET Power MOSFET KRFR9310 Transistors IC TO-252 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm Features Surface Mount +0.2 9.70-0.2 Fast Switching P-Channel Avanced Process Technology Fully Avalanche Rated +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ -10V,Tc = 25 Continuous Drain Current, VGS @ -10V,Tc = 100 Pulsed Drain Current*1 Power Dissipation Tc = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*3 Avalanche Current *1 Repetitive Avalanche Energy *1 Peak Diode Recovery dv/dt *2 Operating Junction and Storage Temperature Range Junction-to-Case Junction-to-Ambient Junction-to-Ambient VGS EAS IAR EAR dv/dt TJ,TSTG R R R JC JA JA Symbol ID ID IDM PD Rating -1.8 -1.1 -7.2 50 0.4 20 92 -1.8 5 -24 -55 to + 150 2.5 50 110 Unit A W W/ V mJ A mJ V/ns /W /W /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -1.1A, di/dt 450A/ s, VDD V(BR)DSS,TJ 150 *3 Starting TJ = 25 , L = 57 mH,RG = 25 , IAS = -1.8A. 3.80 www.kexin.com.cn 1 SMD Type KRFR9310 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Qg Qgs Qgd td(on) tr td(off) tf LD Symbol V(BR)DSS V(BR)DSS/ Transistors IC Testconditons VGS = 0V, ID =- 250 A TJ ID = -1mA,Reference to 25 VGS = -10V, ID = -1.1A*1 VDS = VGS, ID = -250 A VDS = -50V, ID = -1.1A*1 VDS = -400V, VGS = 0V VDS = -320V, VGS = 0V, TJ = 125 Min -400 Typ Max Unit V -0.41 7.0 -2.0 0.91 -100 -500 -100 100 13 3.2 5.0 11 10 25 24 4.5 -4.0 V/ RDS(on) VGS(th) gfs IDSS V S A IGSS VGS = 20V VGS = -20V ID = -1.1A VDS = -320V VGS = -10V,*1 VDD = -200V ID = -1.1A RG =21 RD =180 *1 nA nC ns nH Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time *1 Pulse width 300 s; duty cycle 2%. Body Diode) LS Ciss Coss Crss IS ISM VSD trr Qrr ton TJ = 25 , IS = -1.1A, VGS = 0V*1 TJ = 25 , IF = -1.1A di/dt = 100A/ s*1 VGS = 0V VDS = -25V f = 1.0MHz 7.5 270 50 8.0 -1.8 nH pF A Body Diode) *2 -7.2 -4.0 170 640 260 960 V ns C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn |
Price & Availability of KRFR9310
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |