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| SKM 600GB066D Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITRANS(R) 3 Trench IGBT Modules SKM 600GB066D Inverse Diode Module Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications Remarks GB 1 06-10-2009 NOS (c) by SEMIKRON SKM 600GB066D Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITRANS(R) 3 Trench IGBT Modules SKM 600GB066D Module Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Typical Applications Remarks GB 2 06-10-2009 NOS (c) by SEMIKRON SKM 600GB066D Zth Symbol Zth(j-c)l Conditions Values Units SEMITRANS(R) 3 Zth(j-c)D Trench IGBT Modules SKM 600GB066D Features Typical Applications Remarks GB 3 06-10-2009 NOS (c) by SEMIKRON SKM 600GB066D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 06-10-2009 NOS (c) by SEMIKRON SKM 600GB066D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovered charge 5 06-10-2009 NOS (c) by SEMIKRON SKM 600GB066D UL recognized, file no. E 63 532 6 06-10-2009 NOS (c) by SEMIKRON |
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