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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH417D DESCRIPTION *With TO-3PML package *High voltage *High speed switching *Built-in damper diode APPLICATIONS *Switching power supply for TV's and monitors PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature tp<5ms TC=25 tp<5ms Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 7 12 4 7 55 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=100mA ;IB=0 IC=4A ; IB=1A IC=4A ; IB=1A VCE=1700V; VBE=0 Tj=125 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IF=4A 8 6 MIN 700 BUH417D SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF TYP. MAX UNIT V 1.5 1.3 1.0 2.0 200 36 V V mA mA 2 V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.27 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUH417D Fig.2 Outline dimensions 3 |
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