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| PSKT 170 Thyristor Modules Thyristor/Diode Modules Preliminary Data Sheet ITRMS ITAVM VRRM = 2x 350 A = 2x 203 A = 1200-1800 V VRSM VDSM V 1300 1500 1700 1900 VRRM VDRM V 1200 1400 1600 1800 Type 3 Version 1 PSKT 170/12io1 PSKT 170/14io1 PSKT 170/16io1 PSKT 170/18io1 2 3 67 1 542 1 76 5 4 Symbol ITRMS ITAVM ITSM, IFSM Test Conditions TVJ = TVJM TC = 85C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) repetitive, IT = 660 A non repetitive, IT = ITAVM Maximum Ratings 350 203 5400 5800 5000 5500 146 000 140 000 125 000 126 000 100 500 1000 120 60 20 10 -40...+130 130 -40...+125 A A A A A A A 2s A 2s A2 s A2 s A/s A/s V/s W W W V C C C V~ V~ Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 148688 Keyed gate/cathode twin pins i2dt TVJ = 45C VR = 0 TVJ = TVJM VR = 0 (di/dt)cr TVJ = TVJM f =50 Hz, tP =200 s VD = 2/3 VDRM IG = 1 A, diG/dt = 1 A/s (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 s tP = 500 s Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 3000 3600 Mounting torque (M6) Terminal connection torque (M8) Typical including screws 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. Advantages Space and weight savings Simple mounting Improved temperature and power cycling capabiltiy Reduced protection circuits 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Symbol IRRM, IDRM VT, VF VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, IF = 600 A; TVJ = 25C For power-loss calculations only (TVJ = 130C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C VD = 2/3 VDRM VD = 2/3 VDRM Characteristic Values 40 1.65 0.8 1 2 3 150 220 0.25 10 200 150 2 typ. 200 550 235 0.164 0.082 0.204 0.102 mA V V m V V mA mA V mA mA VG 10 1: IGT, TVJ = 140C 130C V 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 3 2 1 1 4 5 6 TVJ = 25C; tP = 30 s; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/s TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/s TVJ = TVJM; IT = 300 A, tP = 200 s; -di/dt = 10 A/s VR = 100 V; dv/dt = 50 V/s; VD = 2/3 VDRM TVJ = 125C; IT, IF = 300 A; -di/dt = 50 A/s per per per per thyristor (diode); DC current module thyristor (diode); DC current module 4: PGM = 20 W IGD, TVJ = 140C 130C 5: PGM = 60 W 6: PGM = 120 W 100 IG 101 A 102 mA s s C A K/W K/W K/W K/W 0.1 10-3 10-2 10-1 Fig. 1 Gate trigger characteristics 100 TVJ = 25C s tgd typ. Limit other values see Fig. 8/9 Creeping distance on surface Creepage distance in air Maximum allowable acceleration 12.7 mm 9.6 mm 50 m/s2 10 Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red 1 0.01 0.1 1 IG A 10 Dimensions in mm (1 mm = 0.0394") M8x20 Fig. 2 Gate trigger delay time 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 6000 ITSM A 5000 106 50 Hz 80 % VRRM TVJ = 45C TVJ = 130C I2dt A2s 400 ITAVM A IFAVM 300 4000 TVJ = 45C 3000 105 200 DC 180 sin 120 60 30 2000 TVJ = 130C 100 1000 0 0.001 0.01 0.1 s t 1 104 1 t ms 10 0 0 25 50 75 100 TC 125 C 150 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Ptot 400 Fig. 4 i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) RthKA K/W W 300 0.1 0.2 0.3 0.4 0.6 0.8 1.0 200 100 DC 180 sin 120 60 30 0 0 100 200 300 A 0 25 50 75 100 125 C 150 TA ITAVM/IFAVM 2000 Ptot W 1500 RthKA K/W 0.04 0.06 0.08 0.1 0.15 0.2 0.3 Circuit B6 3xPSKT170 3xMCC170 500 Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 1000 0 0 200 400 600 A IdAVM 0 25 50 75 100 125 C 150 TA POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Ptot 2000 W RthKA K/W 0.04 0.06 0.08 0.1 0.15 0.2 0.3 Circuit W3 3xPSKT170 3xMCC170 1500 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 1000 500 0 0 100 200 300 400 A 0 25 50 75 100 125 C 150 IRMS TA 0.25 ZthJC K/W 0.20 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.160 0.171 0.180 0.203 0.247 0.15 0.10 30 60 120 180 DC 0.05 Constants for ZthJC calculation: i Rthi (K/W) 0.0077 0.0413 0.096 0.0149 ti (s) 0.00054 0.098 0.54 12 10 -2 0.00 10-3 10 -1 10 0 10 1 s t 10 2 1 2 3 4 0.30 K/W ZthJK 0.25 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.200 0.211 0.220 0.243 0.287 0.20 0.15 30 60 120 180 DC 0.10 0.05 Constants for ZthJK calculation: i Rthi (K/W) 0.0077 0.0413 0.096 0.0149 0.04 ti (s) 0.00054 0.098 0.54 12 12 s t 102 0.00 10-3 10-2 10-1 100 101 1 2 3 4 5 POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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