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| SSM9406GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9406GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM9406GM is supplied in an RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications. 30V 18m 9A Pb-free; RoHS-compliant SO-8 D D D D G SO-8 S S S ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25C TC = 70C Pulsed drain current 1 Value 30 20 9 7.5 50 2.5 0.02 Units V V A A A W W/C Total power dissipation, TC = 25C Linear derating factor TSTG TJ Storage temperature range Operating junction temperature range -55 to 150 -55 to 150 C C THERMAL CHARACTERISTICS Symbol RJA Parameter Maximum thermal resistance, junction-ambient 3 Value 50 Units C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board ; 125C/W when mounted on the minimum pad area required for soldering. 3/16/2006 Rev.3.01 www.SiliconStandard.com 1 of 5 SSM9406GM ELECTRICAL CHARACTERISTICS Symbol BVDSS Parameter Drain-source breakdown voltage Breakdown voltage temperature coefficient (at Tj = 25C, unless otherwise specified) Test Conditions VGS=0V, ID=250uA Reference to 25C, ID=1mA VGS=10V, ID=9A VGS=4.5V, ID=7A Min. 30 1 Typ. 0.02 15 8 2 4 7 6 19 7 620 230 90 Max. Units 18 25 3 1 25 100 13 1530 V V/C m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF BV DSS/Tj RDS(ON) Static drain-source on-resistance2 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate threshold voltage Forward transconductance VDS=VGS, ID=250uA VDS=10V, ID=9A Drain-source leakage current VDS=30V, VGS=0V VDS=24V ,VGS=0V, Tj = 70C VGS=20V ID=9A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3 , VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-source leakage current Total gate charge 2 Gate-source charge Gate-drain ("Miller") charge Turn-on delay time Rise time Turn-off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance 2 Rg Gate Resistance f=1.0MHz - 3.2 - Source-Drain Diode Symbol VSD trr Qrr Parameter Forward voltage 2 Test Conditions IS=2.1A, VGS=0V IS=9A, VGS=0V, dI/dt=100A/s Min. - Typ. 24 16 Max. Units 1.2 V ns nC Reverse-recovery time Reverse-recovery charge Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150C. 2.Pulse width <300us, duty cycle <2%. 3/16/2006 Rev.3.01 www.SiliconStandard.com 2 of 5 SSM9406GM 50 50 T A = 25 o C 40 10V 7.0V 5.0V 4.5V ID , Drain Current (A) T A = 150 o C 40 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V 30 30 20 V G = 3.0 V 20 V G = 3.0 V 10 10 0 0 1 2 3 4 0 0.0 1.0 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 24 1.6 ID=7A T A =25C 21 1.4 ID=9A V G =10V Normalized R DS(ON) RDS(ON) (m ) 1.2 18 1.0 15 0.8 12 0.6 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 2 9 1.5 6 IS(A) T j =150 o C 3 T j =25 o C Normalized VGS(th) (V) 1.2 1 0.5 0 0 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode 3/16/2006 Rev.3.01 Fig 6. Gate Threshold Voltage vs. Junction Temperature www.SiliconStandard.com 3 of 5 SSM9406GM f=1.0MHz 15 1000 ID=9A VGS , Gate to Source Voltage (V) 12 C iss 9 V DS =1 6 V V DS =20V V DS =24V C (pF) 100 C oss C rss 6 3 0 10 0 4 8 12 16 20 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 0.2 10 1ms ID (A) 10ms 1 0.1 0.1 0.05 0.02 100ms 1s 0.1 0.01 PDM Single Pulse 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta R thja=125C/W T A =25 o C Single Pulse DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform 3/16/2006 Rev.3.01 Fig 12. Gate Charge Waveform www.SiliconStandard.com 4 of 5 SSM9406GM PHYSICAL DIMENSIONS D SYMBOL A A1 H E MIN 1.35 0.10 0.33 0.19 4.80 3.80 5.80 0.38 MAX 1.75 0.25 0.51 0.25 5.00 4.00 6.50 1.27 B C D E e A C A1 e H L L 1.27(TYP) B All dimensions in millimeters. Dimensions do not include mold protrusions. PART MARKING PART NUMBER: 9406GM XXXXXX YWWSSS DATE/LOT CODE: (YWWSSS) Y = last digit of the year WW = week SSS = lot code sequence PACKING: Moisture sensitivity level MSL3 3000 pcs in antistatic tape on a 13 inch (330mm) reel packed in a moisture barrier bag (MBB). 3/16/2006 Rev.3.01 www.SiliconStandard.com 5 of 5 |
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