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APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO APT54GA60S -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT54GA60B when switching at high frequency. Single die IGBT (R) FEATURES * Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant TYPICAL APPLICATIONS * ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Parameter Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 1 Ratings 600 96 54 161 30 416 161A @ 600V -55 to 150 300 Unit V A V W C Static Characteristics Symbol VBR(CES) VCE(on) VGE(th) ICES IGES TJ = 25C unless otherwise specified Test Conditions VGE = 0V, IC = 1.0mA VGE = 15V, IC = 32A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Min 600 Typ 2.0 1.9 4.5 Max 2.5 6 250 2500 100 Unit V VGE =VCE , IC = 1mA A nA 6 - 2009 052-6328 Rev D VGS = 30V Thermal and Mechanical Characteristics Symbol RJC WT Torque Characteristic Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Min - Typ 5.9 Max .3 - Unit C/W g in*lbf 10 Microsemi Website - http://www.microsemi.com Dynamic Characteristics Symbol Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6 TJ = 25C unless otherwise specified Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 32A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 32A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 32A RG = 4.74 TJ = +125C 161 17 20 112 86 534 466 16 21 146 145 891 838 APT54GA60B_S Min Typ 4130 350 45 158 26 52 A nC pF Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Max Unit ns J ns J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6328 Rev D 6 - 2009 Typical Performance Curves 100 V GE APT54GA60B_S 350 TJ= 25C 300 IC, COLLECTOR CURRENT (A) 250 200 8V 150 100 50 0 7V 6V 5V 04 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C) I = 32A C T = 25C J = 15V IC, COLLECTOR CURRENT (A) TJ= 55C 75 15V 13V 10V 9V TJ= 125C TJ= 150C 50 25 0 0 2 4 6 8 200 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 GATE CHARGE (nC) FIGURE 4, Gate charge 160 IC, COLLECTOR CURRENT (A) 150 VCE = 120V VCE = 300V 100 VCE = 480V 50 TJ= 25C TJ= 125C TJ= -55C 6 8 10 12 14 0 0 2 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 4 3 IC = 64A IC = 32A 3 IC = 64A IC = 32A 2 IC = 16A 1 2 1 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 16A 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.15 0 6 0 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 0 25 160 140 IC, DC COLLECTOR CURRENT (A) 120 100 80 6 - 2009 25 50 052-6328 Rev D 60 40 20 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature -50 -25 Typical Performance Curves 21 td(ON), TURN-ON DELAY TIME (ns) 20 19 VGE = 15V 18 17 16 15 14 200 td(OFF), TURN-OFF DELAY TIME (ns) VCE = 400V TJ = 25C, or 125C RG = 4.7 L = 100H APT54GA60B_S 160 VGE =15V,TJ=125C 120 80 VGE =15V,TJ=25C 40 VCE = 400V RG = 4.7 L = 100H 0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 RG = 4.7, L = 100H, VCE = 400V 60 0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 0 160 50 tr, RISE TIME (ns) tr, FALL TIME (ns) 40 30 20 10 0 TJ = 25 or 125C,VGE = 15V TJ = 125C, VGE = 15V 120 80 TJ = 25C, VGE = 15V 40 RG = 4.7, L = 100H, VCE = 400V 0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 2400 Eon2, TURN ON ENERGY LOSS (J) 2000 1600 1200 800 400 0 TJ = 25C EOFF, TURN OFF ENERGY LOSS (J) V = 400V CE V = +15V GE R =4.7 G 0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2400 2000 1600 1200 800 400 0 TJ = 25C V = 400V CE V = +15V GE R = 4.7 G 0 TJ = 125C TJ = 125C 0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 6000 SWITCHING ENERGY LOSSES (J) 5000 4000 3000 2000 1000 0 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance 0 Eoff,32A Eoff,64A V = 400V CE V = +15V GE T = 125C J 0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 2400 V = 400V CE V = +15V GE R = 10 G Eon2,64A SWITCHING ENERGY LOSSES (J) Eon2,64A 2000 1600 1200 Eoff,64A 052-6328 Rev D 6 - 2009 Eon2,32A Eon2,32A Eon2,16A Eoff,16A 800 400 0 Eoff,32A Eon2,16A Eoff,16A 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 Typical Performance Curves 10000 Cies IC, COLLECTOR CURRENT (A) 100 C, CAPACITANCE (pF) 500 APT54GA60B_S 1000 10 Coes 100 1 Cres 10 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area 0.1 0.35 ZJC, THERMAL IMPEDANCE (C/W) 0.30 0.25 0.7 0.20 0.5 0.15 0.10 0.05 0 10 -5 D = 0.9 Note: PDM 0.3 0.1 0.05 10 -4 t1 t2 SINGLE PULSE 10 -3 10 -2 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10 -1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 052-6328 Rev D 6 - 2009 APT54GA60B_S 10% Gate Voltage td(on) 90% TJ = 125C APT30DQ60 tr V CC IC V CE Collector Current 5% Collector Voltage 5% 10% A D.U.T. Switching Energy Figure 12, Inductive Switching Test Circuit Figure 13, Turn-on Switching Waveforms and Definitions 90% td(off) TJ = 125C Gate Voltage Collector Voltage tf 10% 0 Collector Current Switching Energy Figure 14, Turn-off Switching Waveforms and Definitions TO-247 (B) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D3PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532) Collector 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15(.045) Collector 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 052-6328 Rev D 6 - 2009 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Collector Gate Collector and Leads are Plated Emitter 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Emitter Collector Dimensions in Millimeters and (Inches) Gate Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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