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JMnic
Product Specification
Silicon PNP Power Transistors
2SB713
DESCRIPTION With TO-3PN package Wide area of safe operation Excellent good linearity of hFE APPLICATIONS For high power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -200 -140 -5 -9 -15 100 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SB713
SYMBOL
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=-7A; IB=-0.7A
-2.0
V
VBE
Base-emitter on voltage
IC=-7A;VCE=-5V
-1.8
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-50
|I
A
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
|I
A
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
20
hFE-2
DC current gain
IC=-1A ; VCE=-5V
40
200
hFE-3
DC current gain
IC=-7A ; VCE=-5V
15
fT
Transition frequency
IC=-0.5A ; VCE=-5V
7
MHz
COB
Collector output capacitance
f=1MHz;VCB=-10V
220
pF
hFE-2 Classifications R 40-80 Q 60-120 P 100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB713
Fig.2 outline dimensions
3

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