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Ordering number : ENA0872A
CPH3252
SANYO Semiconductors
DATA SHEET
CPH3252
Applications
*
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
DC / DC converters, relay drivers, lamp drivers, motor drivers, inverters.
Features
* * * * * *
Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (600mm20.8mm) Conditions Ratings 180 180 150 7 1.5 2.5 300 0.9 150 --55 to +150 Unit V V V V A A mA W C C
Marking : DX
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21308 TI IM / O2407EA TI IM TC-00000970 No. A0872-1/4
CPH3252
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf VCB=80V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA VCE=10V, IC=300mA VCB=10V, f=1MHz IC=0.75A, IB=75mA IC=0.5A, IB=50mA IC=0.75A, IB=75mA IC=10A, IE=0A IC=100A, RBE=0 IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 200 140 12 85 65 0.85 180 180 150 7 50 1460 70 130 100 1.2 Conditions Ratings min typ max 1 1 560 MHz pF mV mV V V V V V ns ns ns Unit A A
Package Dimensions
unit : mm (typ) 7015A-003
2.9 0.15
Switching Time Test Circuit
PW=20s D.C.1% INPUT VR10
IB1 OUTPUT IB2 RB
0.6
3
0.2
RL
2.8
1.6
0.05
50 + 100F + 470F VCC=75V
0.6
1
0.95
2
0.4
1 : Base 2 : Emitter 3 : Collector SANYO : CPH3
VBE= --5V
0.2
IC=10IB1= --10IB2=0.5A
0.9
1.5
IC -- VCE
80 m A 90 m
1.5
IC -- VCE
70mA
60mA
Collector Current, IC -- A
70
30mA
20mA
10mA
Collector Current, IC -- A
1.2
50mA 40mA
60mA
50mA
40mA
A
30mA
20mA
10mA
1.2
0.6
100 mA
0.9
m
A
0.9
0.6
2mA
5mA
0.3
0.3
0 0
IB=0mA
0.1 0.2 0.3 0.4 0.5 IT12727
0 0
IB=0mA
1 2 3 4 5 IT12728
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No. A0872-2/4
CPH3252
1.5
IC -- VBE
VCE=5V
7 5
hFE -- IC
Ta=75C
VCE=5V
25C
Collector Current, IC -- A
1.2 3
DC Current Gain, hFE
--25C
2
0.9
100 7 5
0.6
C 25C
0.3
Ta=7 5
--25C
3 2 0.01
0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT12729
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Base-to-Emitter Voltage, VBE -- V
5 2
VCE(sat) -- IC
IC / IB=10
Collector Current, IC -- A
3
IT12730
VBE(sat) -- IC
IC / IB=10
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
2
0.1 7 5
Ta
3
C 5 =7
1.0
Ta= --25C
7
25C
--2
2
5C 5C 2
75C
5
0.01 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
3 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
3
IT12731 7
fT -- IC
Collector Current, IC -- A
IT12732
Cob -- VCB
VCE=10V
f=1MHz
5
Gain-Bandwidth Product, fT -- MHz
2
Output Capacitance, Cob -- pF
3 2
100 7 5
10 7 5
3 2
10 0.01
2
3
5
7
0.1
2
3
5
Collector Current, IC -- A
7 5 3 2
1.0 IT12733
7
3 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
ASO
ICP=2.5A IC=1.5A
DC op
10
Collector-to-Base Voltage, VCB -- V
1.0
5 7 100 IT12734
PC -- Ta
<10s
0.9
When mounted on ceramic substrate (600mm20.8mm)
Collector Dissipation, PC -- W
0 s s 50 100
Collector Current, IC -- A
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2
1m
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
m s 10 0m er s ati on (T c= 25 C )
s
0.001 0.01 2 3
Ta=25C Single pulse When mounted on ceramic substrate (600mm20.8mm)
5 7 0.1 23 5 7 1.0 23 5 7 10 23 5 7100 2
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
IT12735
Ambient Temperature, Ta -- C
IT12717
No. A0872-3/4
CPH3252
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This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice.
PS No. A0872-4/4

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