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 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD795
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat)= 0.7V(Max) @IC= 2.0A
APPLICATIONS *Designed for audio frequency power amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25
w
ww
scs .i
VALUE 50 40 5 3.0 6.0 0.6 1.5
UNIT V
V
.cn mi e
V A A A
PC Collector Power Dissipation @ TC=25 TJ Tstg Junction Temperature Storage Temperature Range 20 150 -55~150
W

isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SD795
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
B
0.7
V
VBE(on)
Base-Emitter On Voltage
IC= 0.5A; VCE= 1V
0.9
V
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
1.0
A
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
1.0
A
hFE-1
DC Current Gain
IC= 0.5A; VCE= 1V
hFE-2
DC Current Gain
COB
Collector Output Capacitance
fT
Current-Gain--Bandwidth Product
hFE-1 Classifications R 60-120 Q 100-200
w w
P 160-320
w.
E
sem isc
IC= 2.5A; VCE= 1V IE= 0; VCB= 10V; f= 1MHz IC= 0.1A; VCE= 5V
.cn i
30
60
400
40
pF
95
MHz
200-400
isc Websitewww.iscsemi.cn
2


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