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| SSG9971 Elektronische Bauelemente 5A, 60V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description The SSG9971 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 6.20 5.80 0.25 3.80 4.00 0.40 0.90 0.19 0.25 45 o 0.375 REF 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 Features * Simple drive requirement * Low gate charge D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 D2 Date Code 9971SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1.2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 60 25 5.0 3.2 30 2.0 0.016 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient Max. 3 Symbol Rthj-a Ratings 62.5 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSG9971 Elektronische Bauelemente 5A, 60V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 oC Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance2 Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 60 _ Typ. _ Max. _ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=250uA Reference to 25oC, ID=1mA VDS=VGS, ID=250uA VGS= 25 V VDS=60V,VGS=0 VDS=48V,VGS=0 VGS=10V, ID=5.0A VGS=4.5V, ID=2.5A 0.06 _ _ _ _ 1.0 _ _ _ _ 3.0 100 1 25 50 60 _ _ _ _ _ 32.5 4.9 8.8 9.6 10 30 5.5 1658 156 109 7 RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m[ Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=5.0A VDS=48V VGS=10V _ _ _ _ _ _ _ VDD=30V ID=5 A nS VGS=10V RG=3.3 [ RD=6 [ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=5.0A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VDS Trr Qrr Min. _ Typ. _ Max. 1.2 Unit V Test Condition IS =1.6A , VGS=0V. IS =5.0A , VGS=0V. dl/dt=100A/us Reverse Recovery Time Reverse Recovery Charge _ _ 29.2 48 _ _ nS nC Notes: 1.Pulse width limited by safe operating area. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 125OC/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSG9971 Elektronische Bauelemente 5A, 60V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SSG9971 Elektronische Bauelemente 5A, 60V,RDS(ON) 50m[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10ms DC Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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