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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV27
DESCRIPTION With TO-220C package Low collector saturation voltage Fast switching speed APPLICATIONS For use in high frequency and efficiency converters,switching regulators and motor control
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Tc=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER

Collector-base voltage
CHA IN
Emitter-base voltage Base current Base current (peak)
Collector-emitter voltage
GE S N
Open emitter
Open base
EMIC
CONDITIONS
OND
TOR UC
VALUE 240 120 7 12 20 4 6
UNIT V V V A A A A W ae ae
Open collector
Collector current (DC) Collector current (peak)
Total power dissipation Max.operating junction temperature Storage temperature
TC=25ae
85 175 -65~175
THERMAL CHARACTERISTICS
SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.76 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP.
BUV27
SYMBOL
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2 A ;IB=0;L=25mH
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA; IC=0
7
30
V
VCEsat-1
Collector-emitter saturation voltage
IC=4A ;IB=0.4 A
0.7
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A; IB=0.8A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=8A; IB=0.8A VCE =240V;VBE = -1.5 V TC=125ae VEB=5V; IC=0
2
V
ICEX
Collector cut-off current
1
mA
IEBO
Emitter cut-off current
Switching times resistive load

1
mA
ton
Turn-on time
ts
Storage time
tf
Fall time
HAN INC
SEM GE
IC=8A;IB1=0.8A;VCC=90V VBE = - 6V;RBB = 3.75|
OND IC
TOR UC
0.4 0.8 0.5 1.2 |I 0.12 0.25 |I
ms
s
s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUV27
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3


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Price & Availability of BUV27
Quest Components

Part # Manufacturer Description Price BuyNow  Qty.
BUV27
STMicroelectronics POWER BIPOLAR TRANSISTOR, 12A I(C), 120V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN 18: USD0.906
4: USD1.208
1: USD1.51
BuyNow
19
BUV27
STMicroelectronics POWER BIPOLAR TRANSISTOR, 12A I(C), 120V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN 334: USD0.8372
156: USD0.9016
1: USD2.576
BuyNow
477

ComSIT USA

Part # Manufacturer Description Price BuyNow  Qty.
BUV27
STMicroelectronics MEDIUM POWER NPN SILICON TRANSISTOR Power Bipolar Transistor, 12A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin RFQ
40

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