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| JMnic Product Specification Silicon PNP Power Transistors 2SB954 2SB954A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage APPLICATIONS For power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2SB954 VCBO Collector-base voltage 2SB954A 2SB954 VCEO Collector-emitter voltage 2SB954A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ae ae Open collector Open base -80 -5 -1 -2 2 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT 1 JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB954 IC=-30mA ;IB=0 2SB954A IC=-1.0A ;IB=-0.125A IC=-1A ; VCE=-4V 2SB954 2SB954A 2SB954 2SB954A VCE=-30V; IB=0 CONDITIONS 2SB954 2SB954A SYMBOL MIN -60 TYP. MAX UNIT VCEO Collector-emitter voltage V -80 -1.0 -1.3 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage ICEO Collector cut-off current -300 VCE=-60V; IB=0 VCE=-60V; VBE=0 -200 VCE=-80V; VBE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V IC=-1A ; VCE=-4V IC=-0.2A; VCE=-5V,f=10MHz 70 15 30 0.5 IC=-1A ;VCC=-50V IB1=-0.1A, IB2=0.1A 1.2 0.3 -1 250 |I A ICES Collector cut-off current |I A IEBO hFE-1 hFE-2 fT ton ts tf Emitter cut-off current DC current gain DC current gain Transition frequency Trun-on time Storage time Fall time mA MHz |I |I |I s s s hFE-1 Classifications Q 70-150 P 120-250 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB954 2SB954A Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SB954 2SB954A 4 |
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