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BAW62
FEATURES :
* High switching speed: max. 4 ns * Continuous reverse voltage:max. 75 V * Repetitive peak reverse voltage:max. 75 V * Repetitive peak forward current: max. 450 mA * Pb / RoHS Free
HIGH SPEED SWITCHING DIODE
DO - 35 Glass (DO-204AH)
0.079(2.0 )max.
1.00 (25.4) min.
Cathode Mark
0.150 (3.8) max.
MECHANICAL DATA :
Case: DO-35 Glass Case Weight: approx. 0.13g
0.020 (0.52)max.
1.00 (25.4) min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at
Parameter
Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Continuous Forward Current Maximum Power Dissipation Maximum Repetitive Peak Forward Current Maximum Non-repetitive Peak Forward Current at t = 1s Maximum Junction Temperature Storage Temperature Range
25 C ambient temperature unless otherwise specified.)
Symbol
VRRM VRM IF PD IFRM IFSM TJ TS
Value
75 75 250 350 450 0.5 200 -65 to + 200
Unit
V V mA mW mA A C C
Electrical Characteristics (TJ = 25C unless otherwise noted)
Parameter
Reverse Current Forward Voltage Diode Capacitance Reverse Recovery Time
Symbol
IR VF Cd Trr
Test Condition
VR = 75 V VR = 75 V , Tj = 150 C IF = 100 mA f = 1MHz ; VR = 0 IF = 10 mA to IR = 10 mA RL = 100 ; measured at IR = 1mA
Min -
Typ -
Max 5 100 1.0 2.0 4
Unit A V pF ns
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( BAW62 )
FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE. 250 CONTINUOUS FORWARD CURRENT, IF (mA) Lead Length 10mm. 1000 FIG. 2 TYPICAL FORWARD VOLTAGE
Forward Current , IF (mA)
200
100
150
10 TJ = 25C 1
100
50
0 0 100 200
0.1 0
0.4
0.8
1.2
1.4
Ambient Temperature , Ta (C)
Forward Voltage , VF (V)
FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE
FIG.4 TYPICAL REVERESE CURRENT VS JUNCTION TEMPERATURE
1.2
103
1.0
VR = 75V
Diode Capacitance , Cd (pF)
0.9 0.8
Reverse Current , IR (A)
102
10
0.7 f = 1MHz; TJ = 25C
1
0.6
10-1 0.5 10-2 0 10 20 0 100 200
0.4
Reverse Voltage , VR (V)
Junction Temperature , Ta (C)
Page 2 of 2
Rev. 02 : March 25, 2005

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Price & Availability of BAW62

Part #	Manufacturer	Description	Price	BuyNow Qty.
BAW62 BAW62-ND	onsemi	DIODE GEN PURP 75V 300MA DO35		0
BAW62 2156-BAW62-ND	Rochester Electronics LLC	DIODE GEN PURP 75V 300MA DO35	11539: USD0.03	0
BAW62,113 568-11019-1-ND	NXP Semiconductors	DIODE GEN PURP 75V 250MA ALF2	1: USD0.19	0
BAW62,113 568-11019-2-ND	NXP Semiconductors	DIODE GEN PURP 75V 250MA ALF2	250000: USD0.018 100000: USD0.0203 50000: USD0.02165 30000: USD0.02504 10000: USD0.02707	0
BAW62_T50A BAW62_T50A-ND	onsemi	DIODE GEN PURP 75V 300MA DO35		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
BAW62	Philips Semiconductors			8250
BAW62 T/R	Philips Semiconductors			9850

Part #	Manufacturer	Description	Price	BuyNow Qty.
BAW62	Philips Semiconductors	Rectifier Diode, 75 Volt, DO-35	2223: USD0.12 186: USD0.18 1: USD0.6	6600

Part #	Manufacturer	Description	Price	BuyNow Qty.
BAW62	Fairchild Semiconductor Corporation	BAW62 - Rectifier Diode '	1000: USD0.0224 500: USD0.0237 100: USD0.0247 25: USD0.0258 1: USD0.0263	205223
BAW62,143	NXP Semiconductors	BAW62 - Rectifier Diode '	1000: USD0.0195 500: USD0.0207 100: USD0.0216 25: USD0.0225 1: USD0.023	25000

Part #	Manufacturer	Description	Price	BuyNow Qty.
BAW62	NXP Semiconductors	HIGH-SPEED DIODE Rectifier Diode, Avalanche, 1 Phase, 1 Element, 0.25A, 75V V(RRM), Silicon, DO-35		20000

Part #	Manufacturer	Description	Price	BuyNow Qty.
S71JL064HA0BAW620	SPN	INSTOCK		424

Part #	Manufacturer	Description	Price	BuyNow Qty.
BAW62	MFG UPON REQUEST			369600
BAW62	NEC Electronics Group			13440
BAW62	NXP Semiconductors			15602
BAW62	Fairchild Semiconductor Corporation			13950
BAW62	Philips Semiconductors			268016

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