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| AO3705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO3705/L uses advanced trench technology to provide excellent R DS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for buck convertor applications. AO3705 and AO3705L are electrically identical. -RoHs Complaint -AO3705L is Halogen Free Features VDS (V) = -20V ID = -3.2A (V GS = -4.5V) RDS(ON) < 70m (VGS = -4.5V) RDS(ON) < 90m (VGS = -2.5V) RDS(ON) < 110m (VGS = -1.8V) RDS(ON) < 130m (VGS = -1.5V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.45V@1A D K SOT-23-5 Top View G S A 1 2 3 5 4 D K G S A Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain Current Pulsed Drain Current B A MOSFET -20 8 -3.2 -2.5 -25 Schottky Units V V A VGS TA=70C ID IDM VKA TA=25C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET Maximum Junction-to-Ambient A B TA=70C TA=25C TA=70C IF IFM PD TJ, TSTG Symbol Typ 80.3 117 43 153 173 103 1.15 0.7 -55 to 150 20 1 0.5 10 0.66 0.42 V A W C Max 110 150 80 190 220 140 Units C/W t 10s Steady-State Steady-State t 10s Steady-State Steady-State Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A RJA RJL RJA RJL C/W Alpha Omega Semiconductor, Ltd. www.aosmd.com AO3705 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-20V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.2A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-2.8A VGS=-1.8V, ID=-2A VGS=-1.5V, ID=-0.5A gFS VSD IS Forward Transconductance VDS=-5V, ID=-3.2A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.5 -25 56 80 70 85 100 15 -0.7 -1 -1.2 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 80 70 15 8.5 VGS=-4.5V, VDS=-10V, ID=-3.2A 1.2 2.1 7.2 VGS=-4.5V, VDS=-10V, RL=3, RGEN=6 IF=-3.2A, dI/dt=100A/s 36 53 56 37 27 0.4 0.45 0.1 20 44 11 2.5 14 49 23 11 745 70 100 90 110 130 -0.65 Min -20 -1 -5 100 -1 Typ Max Units V A nA V A m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC V mA pF ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/s SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1A Irm CT trr Qrr Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge VR=16V VR=16V, TJ=125C VR=10V IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev1: May 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. www.aosmd.com AO3435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -4.5V 20 15 -2.0V 10 5 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 150 130 RDS(ON) (m) 110 90 VGS=-2.5V 70 VGS=-4.5V 50 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 180 160 140 RDS(ON) (m) -IS (A) 120 100 80 60 40 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C ID=-3.2A 1E+02 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Normalized On-Resistance VGS=-1.5V 1.6 VGS=2.5V VGS=-4.5V ID=-3.5A VGS=-1.5V ID=-0.5A 1 VGS=-1.5V 5 125C 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics 25C -3.0V -2.5V 15 -ID(A) 20 VDS=-5V -ID (A) 10 1.4 VGS=-1.8V 1.2 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 12 125C 25C Alpha & Omega Semiconductor, Ltd. AO3435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-3.2A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 0 Crss 5 10 15 20 Coss Ciss -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 RDS(ON) limited 10s 1000 TJ(Max)=150C TA=25C 10.00 100 Power (W) -ID (Amps) 100 1ms 10ms 0.1s 1.00 10 0.10 TJ(Max)=150C TA=25C 0.1 1 DC 1s 1 0.01 10 100 0.1 0.00001 0.001 0.1 10 1000 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=150C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Ton T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. AO3705 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 200 Capacitance (pF) 0.6 0.8 1 1.2 1 IF (Amps) 160 125C 120 0.1 25C 0.01 80 40 0.001 0 0.2 0.4 VF (V) Figure 12: Schottky Forward Characteristics 0 0 5 10 15 20 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.42 0.39 IF=1A 0.36 VF (Volts) 0.33 IF=0.5A 0.30 0.27 0.24 0 25 50 75 100 125 150 Temperature (C) Figure 14: Schottky Forward Drop vs. Junction Temperature 10 Leakage Current (mA) 1 VKA=20V 0.1 VKA=16V 0.01 0 50 75 100 125 Temperature (C) Figure 15: Schottky Leakage Current vs. Junction Temperature 25 150 -15 10.000 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=220C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1.000 0.100 PD 0.010 Ton 0.001 0.00001 T 100 1000 10000 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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