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| EIA7785-6 UPDATED 11/30/2005 7.70-8.50 GHz 6-Watt Internally Matched Power FET Excelics EIA7785-6 .827.010 .669 .120 MIN FEATURES * * * * * * 7.70- 8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +38.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 36% Power Added Efficiency Hermetic Metal Flange Package .024 .421 YYWW SN .120 MIN .125 .508.008 .442 .168.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105.008 ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 8 V, IDSQ 2000mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 8 V, IDSQ 2000mA Gain Flatness f = 7.70-8.50GHz VDS = 8 V, IDSQ 2000mA Power Added Efficiency at 1dB Compression f = 7.70-8.50GHz VDS = 8 V, IDSQ 2000mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 37.5 9 TYP 38.5 10 MAX UNITS dBm dB 0.6 36 2200 3900 -1.0 4.0 2500 4800 -2.5 4.5 o dB % mA mA V C/W f = 7.70-8.50GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 39mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOLS 1,2 PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12 -5 IDSS 61.2mA -10.2mA 37.5dBm 175 C o -65 to +175 C o CONTINUOUS2 8V -3V 4.1A 20.4mA -3.4mA @ 3dB Compression 175 oC -65 to +175 oC 33W Vds Vgs Ids Igsf Igsr Pin Tch Tstg Pt 33W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 1 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2005 |
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