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MMBT7002 N-Channel Enhancement Mode Field Effect Transistor Features * High density cell design for low RDS(ON) * Voltage controlled small signal switching * High saturation current capability * High speed switching Drain Gate Source 1.Gate 2.Source 3.Drain SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain-Source Voltage Drain-Gate Voltage (RGS 1M) Gate-Source Voltage -Continuous -Non Repetitive (tp < 50 s) Symbol VDSS VDGR VGSS ID Ptot TJ, Ts Value 60 60 20 40 115 800 200 - 55 to + 150 Unit V V V mA mW O Maximum Drain Current -Continuous -Pulsed Total Power Dissipation Operating and Storage Temperature Range C Characteristics at Ta = 25 OC Parameter Drain Source Breakdown Voltage at ID = 10 A Zero Gate Voltage Drain Current at VDS = 60 V Gate-Body Leakage Current at VGS = 20 V Gate Threshold Voltage at VDS = VGS, ID = 250 A On-State Drain Current at VGS = 10 V, VDS = 7.5 V Drain-Source On-Voltage at VGS = 10 V, ID = 500 mA at VGS = 5 V, ID = 50 mA Static Drain-Source On-Resistance at VGS = 10 V, ID = 500 mA Forward Transconductance at VDS = 10 V, ID = 200 mA Input Capacitance at VDS = 25 V, f = 1 MHz Output Capacitance at VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz Turn-On Time at VDD = 30 V, RL= 150 , ID = 0.2 A, VGS = 10V, RGEN = 25 Turn-Off Time at VDD = 30 V, RL= 150 , ID = 0.2 A, VGS = 10V, RGEN = 25 Symbol BVDSS IDSS IGSS VGS(th) ID(ON) VDS(ON) RDS(ON) gFS Ciss Coss Crss ton toff Min. 60 1 500 80 - Max. 1 100 2.5 3.75 1.5 7.5 50 25 5 20 20 Unit V A nA V mA V V mS pF pF pF ns ns SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 25/12/2007 MMBT7002 SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 25/12/2007 |
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