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| SMD Type Transistors IC P-Channel Enhancement Mode Field Effect Transistor KO3401 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Features VDS (V) = -30V ID = -4.2 A (VGS =- 10V) +0.1 2.4-0.1 Unit: mm RDS(ON) RDS(ON) RDS(ON) 50m 65m 120m (VGS = -10V) (VGS = -4.5V) (VGS = -2.5V) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate 2.Emitter 2. Source +0.1 0.38-0.1 0-0.1 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 TA=25 TA=70 IDM PD TJ, TSTG 2 Symbol VDS VGS ID Rating -30 12 -4.2 -3.5 -30 1.4 1 -55 to 150 Unit V V A Pulsed Drain Current *2 Power Dissipation *1 TA=25 TA=70 Junction and Storage Temperature Range W *1The value of R eJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 Repetitive rating, pulse width limited by junction temperature. Thermal Characteristics Parameter Maximum Junction-to-Ambient*1 Maximum Junction-to-Ambient *1 Maximum Junction-to-Lead *2 t 10s Symbol ReJA ReJL Typ 65 85 43 Max 90 125 60 Unit /W /W /W Steady-State Steady-State *1The value of R eJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 *2 . The R eJA is the sum of the thermal impedence from junction to lead R eJL and lead to ambient. www.kexin.com.cn 1 SMD Type KO3401 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Symbol BVDSS IDSS IGSS VGS(th) ID(ON) Testconditons ID=250 A, VGS=0V VDS=-24V, VGS=0V VDS=-24V, VGS=0V ,TJ=55 VDS=0V, VGS= 12V VDS=VGS ID=-250 A VGS=-4.5V, VDS=-5V VGS=-10V, ID=4.2A Static Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=4.2A VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current Pulsed Body-Diode Current * Reverse Transfer Capacitance Gate resistance Input Capacitance Output Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Turn-On DelayTime Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge gFS VSD IS ISM Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr IF=-4A, dI/dt=100A/ IF=-4A, dI/dt=100A/ s s VGS=-10V, VDS=-15V, RL=3.6 ,RGEN=6 VGS=-4.5V, VDS=-15V, ID=-4A VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=-15V, f=1MHz VDS=-5V, ID=-5A IS=-1A,VGS=0V 7 TJ=125 Transistors IC Min -30 Typ Max Unit V -1 -5 100 -0.7 -25 42 50 75 53 80 11 -0.75 -1 -2.2 -30 954 115 77 6 9.4 2 3 6.3 3.2 38.2 12 20.2 11.2 nC nC nC ns ns ns ns ns nC 65 120 -1 -1.3 A nA V A m m m S V A A pF pF pF * Repetitive rating, pulse width limited by junction temperature. Marking Marking A1 2 www.kexin.com.cn |
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