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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1145 DESCRIPTION With TO-220F package High DC current gain. DARLINGTON Low collector saturation voltage APPLICATIONS For high current driver and power driver applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Fig.1 simplified outline (TO-220F) and symbol HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE -120 -120 -6 -3 -5 UNIT V V V A A Open collector TC=25ae PC Ta=25ae Tj Tstg Junction temperature Storage temperature 20 W 2 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1145 SYMBOL MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-100|I A; IE=0 -120 V V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-1.5A ; IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage IC=-1.5A ; IB=-3mA -2.0 V ICBO Collector cut-off current VCB=-120V;IE=0 -50 |I A IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-1.5A ; VCE=-3V 2000 HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1145 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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