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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV22 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 1.0V (Max.) @IC= 10A *High Switching Speed *High DC Current Gain: hFE= 20(Min.) @IC= 10A APPLICATIONS *Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL VCBO VCER VCEX VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= 100 Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 300 290 300 250 7 40 50 8 250 200 -65~200 UNIT V V V V V A A A W PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.7 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BUV22 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V VCE(sat)-2 VBE(sat) ICEO Collector-Emitter Saturation Voltage IC= 20A ;IB= 2.5A IC= 40A ;IB= 4A 1.5 V Base-Emitter Saturation Voltage 1.5 V Collector Cutoff Current VCE= 200V; IB= 0 VCE= 300V;VBE= -1.5V VCE= 300V;VBE= -1.5V;TC=125 VEB= 5V; IC= 0 3.0 3.0 12.0 1.0 mA ICEX Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 10A ; VCE= 4V 20 60 hFE-2 fT DC Current Gain IC= 20A ; VCE= 4V 10 Current-Gain--Bandwidth Product IC= 2A;VCE= 15V, ftest= 4MHz 8 MHz Switching Times s s s ton ts tf Turn-on Time IC= 20A; IB1=-IB2= 2.5A; VCC= 100V; RC= 5 0.8 Storage Time 2.0 Fall Time 0.35 isc Websitewww.iscsemi.cn |
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