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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD844 DESCRIPTION *With TO-3P(I) package *Complement to type 2SB754 *High collector current :IC=7A *Low collector saturation voltage *High power dissipation APPLICATIONS *High current switching applications *Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 60 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 50 50 5 7 -7 2.5 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IE=10mA; IC=0 IC=4.0A; IB=0.4A IC=4A ; VCE=1V VCB=50V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=4A ; VCE=1V IC=1A ; VCE=5V f=1MHz ; VCB=10V 70 30 15 250 MIN 50 5 2SD844 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V V 0.4 1.2 10 10 240 V V A A MHz pF hFE-1 Classifications O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD844 Fig.2 Outline dimensions (unindicated tolerance: 0.10 mm) 3 |
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