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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB974 DESCRIPTION *High DC Current Gain: hFE = 2000(Min)@ IC= -2A *Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A *Complement to Type 2SD1308 APPLICATIONS *Designed for audio frequency power amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-DC Collector Power Dissipation TC=25 w w scs .i w VALUE -100 -100 -7 -5 -10 -0.5 30 UNIT V .cn mi e V V A A A PC W Collector Power Dissipation Ta=25 Junction Temperature Storage Temperature Range 1.5 150 -55~150 Tj Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB974 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -2mA B -1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= -2A, IB= -2mA B -2.0 V A Collector Cutoff Current VCB= -100V, IE= 0 -1.0 IEBO hFE-1 Emitter Cutoff Current VEB= -7V; IC= 0 IC= -2A; VCE= -2V 2000 -5 mA DC Current Gain 20000 hFE-2 DC Current Gain IC= -4A; VCE= -2V Switching times ton tstg tf Turn-on Time Storage Time Fall Time hFE-1 Classifications M 2000-5000 L w ww K scs .i RL= 25, VCC -50V IC= -2A; IB1= -IB2= -2mA .cn mi e 500 0.5 s s s 1.0 1.0 4000-10000 8000-20000 isc Websitewww.iscsemi.cn |
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