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  Datasheet File OCR Text:
 SMD Type
Silicon PNP Epitaxial Planar Type 2SB766,2SB766A
Transistors IC
Features
Large collector power dissipation PC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage 2SB766 2SB766A Collector-emitter voltage 2SB766 2SB766A Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VEBO IC ICP PC Tj Tstg VCEO Symbol VCBO Rating -30 -60 -25 -50 -5 -1 -1.5 -1 150 -55 to +150 V A A W V Unit V
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1
SMD Type
2SB766,2SB766A
Electrical Characteristics Ta = 25
Parameter Collector-base voltage 2SB766 2SB766A Collector-emitter voltage 2SB766 2SB766A Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VEBO ICBO hFE IE = -10iA, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IC = -500 mA VCE = -5 V, IC = -1 A VCE(sat) IC = -500 mA, IB = -50 mA VBE(sat) IC = -500 mA, IB = -50 mA fT Cob VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz VCEO IC = -2 mA, IB = 0 Symbol VCBO Testconditons IC = -10 iA, IE = 0
Transistors IC
Min -30 -60 -25 -50 -5
Typ
Max
Unit V
V
V -0.1 nA
85 50 -0.2 -0.85 200 20
340
-0.4 -1.2
V V MHz
30
pF
hFE Classification
Marking Rank hFE Q 85 170 2SB766(A)/2SB766A(B) R 120 240 S 17 340
2
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