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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB697 2SB697K DESCRIPTION *With TO-3 package *Complement to type 2SD733/733K *High power dissipation APPLICATIONS *Power amplifier applications *Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SB697 VCBO Collector-base voltage 2SB697K 2SB697 VCEO Collector-emitter voltage 2SB697K VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -160 -6 -12 -20 100 150 -40~150 V A A W Open emitter -180 -140 V CONDITIONS VALUE -160 V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS 2SB697 2SB697K SYMBOL MIN TYP. MAX UNIT 2SB697 V(BR)CEO Collector-emitter breakdown voltage 2SB697K IC=-50mA ;IB=0 -140 V -160 2SB697 V(BR)CBO Collector-emitter breakdown voltage 2SB697K IC=-5mA ;IE=0 -160 V -180 V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Emitter-base breakdown voltage IE=-5mA ;IC=0 IC=-6A; IB=-0.6A IC=-1A ; VCE=-5V VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V -6 V Collector-emitter saturation voltage -1.0 -2.5 V Base-emitter on voltage -1.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 40 320 DC current gain 20 Transition frequency 15 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB697 2SB697K Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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